• 제목/요약/키워드: ${\beta}-Bi_2O_3$

검색결과 27건 처리시간 0.022초

ZnO-Bi2O3-Sb2O3 세라믹스의 전기적 특성 (Electrical Properties of ZnO-Bi2O3-Sb2O3 Ceramics)

  • 홍연우;신효순;어동훈;김종희;김진호
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.738-748
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    • 2008
  • In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

도포 열분해법을 이용한 Bi$_4$Ti$_3$O$_{12}$제조에 관한 연구 (Preparation of Bi$_4$Ti$_3$O$_{12}$ Films by Dipping-Pyrolysis Process)

  • 황규석;이형민;김병훈
    • 한국세라믹학회지
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    • 제35권9호
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    • pp.1002-1005
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    • 1998
  • Bismuth titanate thin films were prepared on {{{{ { SrTiO}_{3 } }}(100) and Si(100) substrates by dipping-pyrolysis pro-cess using metal naphthenates as starting materials. crystallinity and in-phase alignment of the films were analyzed by X-ray diffraction $\theta$-2$\theta$ scans and $\beta$ scans (pole-figures) respectively. Highly c-axis-oriented {{{{ { { {Bi }_{4 }Ti }_{3 }O }_{12 } }} thin films with smooth surfaces were obtained after heat treatment at 75$0^{\circ}C$ on {{{{ { SrTiO}_{3 } }}(100) sub-strate while the films grown of Si(100) exhibited polycrstalline characteristics. C-axis oriented film show-ed an epitaxial relationship with the {{{{ { SrTiO}_{3 } }} substrate.

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Sb/Bi비가 ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 바리스터의 소결과 입계 특성에 미치는 영향 (Effect of Sb/Bi Ratio on Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Mn3O4-Co3O4 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국전기전자재료학회논문지
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    • 제25권11호
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    • pp.878-885
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    • 2012
  • In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

$(1-x)(SrPb)(CaMg)TiO_3-xBi_2O_3{\cdot}3TiO_2$ 세라믹의 하전입자 거동에 관한 연구 (A Study on the Behavior of Charged Particles of $(1-x)(SrPb)(CaMg)TiO_3-Bi_2O_3{\cdot}3TiO_2$ Ceramics)

  • 김충혁;최운식;정일형;정규희;이준응
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.34-37
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    • 1992
  • In this paper, the $(SrPb)(CaMg)TiO_3$-xBi_2O_3{\cdot}3TiO_2$ ceramics with paraelectric properties were fabricated by the mixed oxide method. In order to investigate the behavior of charged particles, the characteristics of electrical conduction and thermally stimulated current were measured respectively. As a result on characteristics of the electrical conduction, the leakage current was increased as measuring temperature was increased. At room temperature, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to spare charge which injected from electrode, above 40[kV/cm]. Thermally stimulated currents(TSC) spectra with various biasing fields exhibited three distinguished peaks that were denoted as ${\alpha}$, ${\alpha}'$ and ${\beta}$ peak, each of which appeared at nearby -30, 20 and 95[$^{\circ}C$] respectively. It is confirmed that the a peak was due to trap electron trapped in the grainboundary, and ${\alpha}'$ peak that was observed above only 1.5[kV/mm] was attributed to field-enforced ferroelectric polarization. The origin of ${\beta}$ peak was identified as ion migration which caused the degradation.

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Sol-gel Self-patterning 기술을 이용한 광감응성 Sr0.9Bi2.1Ta2O9 박막의 제조기술에 관한 연구 (A Study on Fabrication of Photosensitive Sr0.9Bi2.1Ta2O9 Thin Film by Sol-gel Self-patterning Technique)

  • 양기호;박태호;임태영;오근호;김병호
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.750-757
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    • 2002
  • Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$$Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

Cytotoxic Anthraquinones and Stilbenes from Reynoutria sachalinensis (Fr. Schm.) Nakai

  • Jin, Wenyi;Na, Min-Kyun;Song, Gyu-Yong;Lee, Young-Mi;Bae, Ki-Hwan
    • 한국약용작물학회지
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    • 제13권2호
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    • pp.80-84
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    • 2005
  • Five known anthraquinones, physcion (1), I-O-methylemodin (2), emodin (3), $physcion-8-O-{\beta},-D-glucopyranoside$ (5), $emodin-8-O-{\beta},-D-glucopyranoside$ (6) and two known stilbenes, trans-resveratrol (4), $trans-resveratrol-3-O-{\beta},-D-glucopyranoside$ (7) were isolated from MeOH extract of Reynoutria sachalinensis (Polygonaceae). All structures were unambiguously established by 1D and 2D NMR and MS data and the compounds were evaluated for their cytotoxicity against L1210, HL-60, BI6F10 tumor cell lines in MTT assay. Among the compounds, trans-resveratrol (4) exhibited significant cytotoxic activity with $IC_{50}$ values of 9.2, 6.7 and $9.8\;{\mu}g/ml$, against the test cell lines respectively, but compounds 1-3 exhibited the moderate cytotoxic activity.

졸-겔법을 이용한 Epitaxial Bismuth Titanate 박막의 제조 (Preparation of epitaxial bismuth titanate thin films by the sol-gel process)

  • 김상복;이영환;윤연흠;황규석;오정선;김병훈
    • 한국결정성장학회지
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    • 제13권2호
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    • pp.56-62
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    • 2003
  • 졸-겔법을 이용하고 금속 나프테네이트를 출발원료로 사용하여 $SrTiO_3$(100), $LaA1O_3$(100) 및 MgO(100) 기판 위에 에피탁샬 $Bi_4Ti_3O_{12}$ 박막을 제조하였다. 코팅된 전구막은 $500^{\circ}C$에서 10분간 전열처리 하였고, $750^{\circ}C$에서 30분간 최종 열처리를 행하였다. 박막의 결정화도는 X-선회절 분석법 ($\theta$-2$\theta$ 스캔과 $\beta$ 스캔)으로 조사하였고, 표면 미세구조와 거칠기를 field emission-scanning electron microscope와 atomic force microscope를 이용하여 각각 분석하였다. MgO(100) 기판 위에 제조한 박막은 모든 기판 중에서 가장 낮은 결정화도와 면내 배향성을 보였다. 가장 낮은 결정화도와 배향성을 보인 MgO(100) 기판위의 박막은 침상 형태로 성장한 반면, 결정성과 배향성이 좋은 $LaA1O_3$(100)과 $SrTiO_3$(100) 기판위의 박막들은 원형의 입자 성장 형태를 보이고 있었다.

Development of a New Sealing Material for PDP

  • Kim, Yu-Jin;Kim, Hyung-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1245-1247
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    • 2005
  • Glass frit was selected to be a $Bi_2O_3-RO-R_2O_3$ system as a sealing material to replace the current PbO system in PDP. Fillers such as a zircon, cordierite and ${\beta}-eucryptite$ were added for the control of thermal expansion coefficient (CTE), flowability and strength for sealing. At $450-500^{\circ}C$, reaction of frit and filler and interface were evaluated by a flow button test and SEM observation. The composite (frit and filler) showed CTE in the range of 70-83 x $10^{-7}/K$ and flowability of 14-20mm. It can be a candidate for the replacement of PbO system.

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Phoswich 검출기 제작을 위한 무기 섬광체 특성 연구 (A Study of the Inorganic Scintillator Properties for a Phoswich Detector)

  • 이우교;김용균;김종경
    • Journal of Radiation Protection and Research
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    • 제29권4호
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    • pp.251-256
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    • 2004
  • Phoswich 검출기를 제작하기 위하여 무기 섬광체인 CsI(Tl), $CdWO_4(CWO),\;Bi_4Ge_3O_{12}(BGO)$$Gd_2SiO_5:Ce(GSO)$의 특성을 연구하였다. CsI(Tl), CWO, BGO 및 GSO 섬광체의 radioluminescence 중심파장은 550 nm, 475 nm, 490 nm 및 440 nm이였고, neutral filter를 사용하여 측정한 CsI(Tl), CWO, BGO 및 GSO 섬광체의 절대광량은 각각 54890 phonon/MeV, 17762 phonon/MeV, 8322 phonon/MeV 및 8932 phonon/MeV이였으며, single photon method로 측정한 형광감쇠시간은 각각 $1.3{\mu}s,\;8.17{\mu}s$, 213 ns 및 37 ns이였다. 플라스틱 섬광체와 CsI(Tl) 섬광체를 사용하여 phoswich 검출기를 제작하였고 PSD(pulse shape discriminator) 방법으로 ${\beta}$ 입자와 ${\gamma}$ 선을 구별하며 각각의 방사선에 대한 파고 스펙트럼을 측정하였다.

애기장대 형질전환 식물체의 세대경과에 따른 GUS유전자의 비활성화에 관한 연구 (The increased GUS gene inactivation over generation in Arabidopsis transgenic lines)

  • Park, Soon-Ki
    • 생명과학회지
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    • 제12권1호
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    • pp.67-76
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    • 2002
  • Agrobacterium(LBA4404/pBI1121)을 이용하여 형질전환된 애기장대 (Arabidopsis thaliana)를 대상으로 T2, T3, F3세대에서의 도입된 외래 유전자의 비활성화 현상을 조사하였다. Kanamaycin저항성 개체들의 GUS유전자 발현을 분석한 결과, T2세대에서 조사된 12계통 중 5계통에서 GUS 비활성 개체가 관찰되었다 (GUS유전자 비활성율 2.3%). Multi copy T-DNA 계통을 조사한 결과, GUS 비활성 정도가 더욱 심해짐이 관찰되었다 (5.8%). T3 세대에서 single copy T-DNA 계통들은 1.3%의 GUS 비활성율을 보인 반면, multi-copy T-DNA 계통에서의 비활성율은 12.6%로 급격히 증가하였다. 유사한 현상이 형질전환 식물체와 정상개체를 교배하여 생산된 F2 계통에서도 관찰되었다 (비활성율 9.9%). 본 실험으로 식물체에 도입된 외래 유전자가 후대에서의 전이과정동안 점진적으로 비활성화되고, 이 현상은 multi copy T-DNA 계통에서 훨씬 심각함이 밝혀졌다.