• Title/Summary/Keyword: ${\Omega}$-stable

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ppGpp: Stringent Response and Survival

  • Jain Vikas;Kumar Manish;Chatterji Dipankar
    • Journal of Microbiology
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    • v.44 no.1
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    • pp.1-10
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    • 2006
  • Adaptation to any undesirable change in the environment dictates the survivability of many microorganisms, with such changes generating a quick and suitable response, which guides the physiology of bacteria. During nutritional deprivation, bacteria show a stringent response, as characterized by the accumulation of (p)ppGpp, resulting in the repression of stable RNA species, such as rRNA and tRNA, with a concomitant change in colony morphology. However, genes involved in amino acid biosynthesis become over-expressed to help bacteria survive under such conditions. The survivability of pathogenic bacteria inside a host cell also depends upon the stringent response demonstrated. Therefore, an understanding of the physiology of stringent conditions becomes very interesting in regulation of the growth and persistence of such invading pathogens.

Behavior of the Temperature Coefficient of Resistance at Parallelly Connected Resistors (병렬로 접속된 저항체에서 저항온도계수의 거동)

  • Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.2
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    • pp.98-101
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    • 2018
  • In this paper, we discuss the fabrication of metal alloy resistors. We connected them in parallel to estimate their resistance and temperature coefficient of resistance (TCR). The fabricated resistors have different resistances, 5 and $10{\Omega}$ and different TCRs, 50 and $200ppm/^{\circ}C$. Each resistor was confirmed to have the correct atomic composition through the use of energy dispersive X-ray (EDX). The resistors' electrical properties were confirmed by measuring resistance and TCR. The resistance and TCR of the resistors connected in parallel were estimated through the increase in resistance due to the increase in temperature, and were compared with the measured values. We are confident that this TCR estimation technique, which uses the increase in resistance due to temperature, will be very useful in designing and fabricating resistors with low and stable TCR.

Growth of $RuO_2$ films and chracteristics of the films with annealing conditions ($RuO_2$박막의 성장과 어닐링 조건에 따른 특성)

  • 조굉래;임원택;이창효
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.333-339
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    • 1999
  • $RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

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A Study on the Dielectric Properties of (Sr,Ca)TiO$_3$-based BL Capacitor Materials ((Sr.Ca)TiO$_3$계 BL Capacitor재료의 유전특성에 관한 연구)

  • 정규희;김진사;최운식;김충혁;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.25-28
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    • 1993
  • In this study, the dielectric properties of (Sr$\sub$1-x/Ca$\sub$x/)TiO$_3$+yNb$_2$O$\sub$5/(0.1 x 0.3, 0.004 y 0.008) ceramic capacitor were investigated. The specimen was sintered for 3hr at 1350$^{\circ}C$ in gas(N$_2$) atmosphere. The reduced specimen fared at 1200$^{\circ}C$ in air. The used specimens had the apparent permittivity of 3${\times}$10$^4$∼4${\times}$10$\^$5/, tan$\delta$ of 0.05 -0.2, and insulating resistance of 10$\sub$9/∼10$\^$12/ $\Omega$.cm. The specimens had the stable temperature coefficient of capacitance.

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Characteristics of the red organic electroluminescect devices doped with DCJTB (DCJTB를 Doping한 적색 유기 발광소자의 특성)

  • Choi, W.J.;Lim, M.S.;Jeong, D.Y.;Lee, J.G.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1034-1037
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    • 2002
  • In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

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Transparent MWCNT Thin Films Fabricated by using the Spray Method (스프레이법으로 제작된 투명 MWCNT 박막)

  • Jang, Kyung-Uk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.338-342
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    • 2010
  • Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. The MWCNT films were investigated as a transparent electrode for the solar cell, OLED, and field-emission display. MWCNT films were fabricated by air spray method, whose process is quite low-costed, using the multi-walled CNTs solution on glass substrates. Moreover, the most stable film was fabricated when the spraying time was 60 sec. The film that was sprayed with the MWCNT dispersion for 60 sec, has 300nm thick. And its electric resistivity, transmittance rate, mobility and carrier concentration are $6{\times}10^{-2}{\Omega}{\cdot}cm$, 50% at ${\lambda}=550mm$, $4.3{\times}10^{-2}cm^2/V{\cdot}s$ and $2.1{\times}10^{21}cm^{-3}$, respectively. Also, absorption energy of MWCNT films show from 3.9 eV to 4.6 eV. Furthermore, we can use MWCNT films fabricated by the spray method for the transparent electrode.

TWO-WAY F냐 simulation OF THE DIAPHRAGM COMPRESSOR AND NON-RETURN CHECK VALVE (고압용 다이아프램 압축기 및 체크 밸브의 2-way FSI 수치해석)

  • Choi, B.S.;Yoon, H.G.;Yoo, I.S.;Park, M.R.
    • 한국전산유체공학회:학술대회논문집
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    • 2010.05a
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    • pp.86-92
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    • 2010
  • A metal diaphragm compressor has been widely used for supplying a high pressures gas. This compressor mainly consists of gas oil space and metal diaphragm. Gas sucked in the gas space is compressed by an oscillating metal diaphragm existed between the gas and oil space. A non-return discharge and suction check-valve are components of the compressor that draw off the compressed oil and gas. Those components are self-actuated by differential pressures. Therefore, the rapid response and stable operating conditions are required. In the present study, to find out the dynamic behavior of the suction, discharge valve and diaphragm compressor, the unsteady flow field has been investigated numerically by using the unsteady two-way FSI (Fluid Structure Interaction) simulation method, $k-{\omega}$ turbulent model and mesh deformation.

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A Study on the Properties and Formation of Mo-Silicides on Si-Substrate (Si 기판위에 Mo-silicides의 형성과 그 특성에 관한 연구)

  • 조한수;조현춘;최진성;백수현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.28A no.1
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    • pp.85-90
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    • 1991
  • MoSi$_2$ was formed by RTA (Rapid Thermal Annealing at 600-1200$^{\circ}C$) under Ar ambient from the Mo-Si mixture film which was deposited on single and poly-Si substrates. The MoSi$_2$ film was investigated by SEM, X-ray diffractometer, four-points probe and AES profile. It was found that the resistivity, the surface roughness, and the formation temperature of MoSi$_2$ were independent on the type of Si substrates. The formation of MoSi$_2$ started from 800$^{\circ}C$ and the phse transformation was completed at 1000$^{\circ}C$. The stable MoSi$_2$ with the resistivity of 74${\mu}{\Omega}$-cm was formed at 1200$^{\circ}C$.

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The analysis of flow over the bridge using preconditioned Navier-Stokes code (예조건화 Navier-Stokes 코드를 이용한 교각 유동해석)

  • Yoo, Il-Yong;Lee, Seung-Soo;Park, Si-Hyong
    • 한국전산유체공학회:학술대회논문집
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    • 2008.03b
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    • pp.13-16
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    • 2008
  • After the collapse of the Tacoma bay bridge at Tacoma Washington, the accurate prediction of aerodynamics became crucial to the sound design of bridges. CFD(Computational Fluid Dynamics) becomes important tool for the prediction on wind effects on the bridge due to the recent development of CFD. The usage of CFD is further prompted by the advantages in using CFD, such as low-cost and fast feed-back of design. In this paper, an unsteady compressible Reynolds averaged Navier-Stokes code is used for the computation of the flow over bridges. Coakley's ��q-${\omega}$ �� two-equation turbulence model is used for the turbulent eddy viscosity. For accurate and stable computations, the local preconditioning method is adapted to the code. Aerodynamic characteristics of a couple bridges are presented to show the validity and the accuracy of the method.

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An a-D film for flat panel displays prepared by FAD

  • Liu, Xianghuai;Mao, Dongsheng
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.7-14
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    • 1998
  • Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

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