Abstract
MoSi$_2$ was formed by RTA (Rapid Thermal Annealing at 600-1200$^{\circ}C$) under Ar ambient from the Mo-Si mixture film which was deposited on single and poly-Si substrates. The MoSi$_2$ film was investigated by SEM, X-ray diffractometer, four-points probe and AES profile. It was found that the resistivity, the surface roughness, and the formation temperature of MoSi$_2$ were independent on the type of Si substrates. The formation of MoSi$_2$ started from 800$^{\circ}C$ and the phse transformation was completed at 1000$^{\circ}C$. The stable MoSi$_2$ with the resistivity of 74${\mu}{\Omega}$-cm was formed at 1200$^{\circ}C$.