Improvement of dielectric and interface properties of Al/CeO$_2$ /Si capacitor by using the metal seed layer and $N_2$ plasma treatment
(금속씨앗층과 $N_2$ 플라즈마 처리를 통한 Al/CeO$_2$ /Si 커패시터의 유전 및 계면특성 개선)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2002.07a
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- pp.326-329
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- 2002