• Journal of the Korean Ceramic Society
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• v.43 no.4 s.287
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• pp.242-246
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• 2006

[ ${\alpha}-Al_2O_3$ ] nanopowders were fabricated by the thermal decomposition and synthetic of Ammonium Aluminum Carbonate Hydroxide (AACH). Crystallite size of 5 to 8 nm were fabricated when reaction temperature of AACH was low, $8^{\circ}C$, and the highest $[NH_4{^+}][AlO(OH)_n{(SO_4){^-}}_{3-n/2}][HCO_3]$ ionic concentration to pH of the Ammonium Hydrogen Carbonate (AHC) aqueous solution was 10. The phase transformation fem $NH_4Al(SO_4)_2$, rhombohedral $(Al_2(SO_4)_3)$, amorphous-, ${\theta}-,\;{\alpha}-Al_2O_3$ was examined at each temperature according to the AACH. A Time-Temperature-Transformation (TTT) diagram for thermal decomposition in air was determined. Homogeneous, spherical nanopowders with a particle size of 70 nm were obtained by firing the 5 to 8 m crystallites, which had been synthesized from AACH at pH 10 and $8^{\circ}C,\;at\;1150^{\circ}C$ for 3 h in air.

• Corrosion Science and Technology
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• v.7 no.3
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• pp.139-144
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• 2008

The results of microstructure observations of the $Al_2O_3$ scale formed on a Fe-Cr-Al steel during high temperature oxidation in the $SO_2$ atmosphere are presented. Morphology of the scale has been studied by SEM and TEM techniques. Phase and chemical compositions have been studied by EDX and XRD techniques. The alumina oxide is a primary component of the scale. TEM observations showed that the scale was multilayer. The entire surface of the scale is covered with "whiskers", which look like very thin platelets and have random orientation. The cross section of a sample shows, that the "whiskers" are approximately $2{\mu}m$ high, however the compact scale layer on which they reside is $0.2{\mu}m$ thick. The scale layer was composed mainly of small equiaxial grains and a residual amount of small columnar grains. EDX analysis of the scale surface showed that the any sulfides were found in the formed outer and thin inner scale layer. A phase analysis of the scale formed revealed that it is composed mainly of the $\theta-Al_2O_3$ phase and a residual amount of $\alpha-Al_2O_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.307-313
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• 2010

One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.