• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.747-750
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.450-453
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• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.367-367
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• 2010

Electrical characteristics of Large-grain silicon with Ni-induced crystallization which gate insulator is made of 80 nm $SiO_2$ and 20 nm SiNx was fabricated and measured with different channel widths, channel length fixed $10{\mu}m$. Focusing on the changes of channel widths from $4{\mu}m$ to $40{\mu}m$. Field-effect mobility decreased from 111.30 to $94.10\;cm^2/V_s$ when the channel widths increased. Still threshold voltage was almost similar with -1.06V.

• Proceedings of the KSRS Conference
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• 2005.10a
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• pp.554-556
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• 2005

Meteorological imager on the Multi-functional Transport Satellite (MTSAT-IR), which has been operating formally since 28 June 2005, was intercalibrated with a polar orbit satellite [Aqua Moderate Resolution Imaging Spectroradiometer (Aqua/MODIS)] as a well-calibrated instrument. The intercalibration method used in this study was developed by the Cooperative Institute for Meteorological Satellite Studies (CIMSS). This was done for the infrared window channels. The differences of MTSAT-IR and MODIS were are -0.26 K for $11\;\mu m-IR$ window channel, 0.40 K for $12\;\mu m-IR$, window channel, and -0.67 K for $6.7\;\mu m-water$ vapor channel.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2125-2132
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• 2012

Fluoxetine and tianeptine are commonly used as antidepressants (AD), and haloperidol and risperidone are widely used as antipsychotic drugs (APD), and it modulates various ion channels. TREK2 channel subfamily is very similar to physiological properties of TREK1 channel which can play important roles in the pathophysiology of mental disorders such as depression and schizophrenia, therefore, the pharmacological effect of psychiatric and depression drug on TREK2 channel may be similar to those of TREK1. Using the excised inside-out patch-clamp technique, we have examined the effects of APD and AD on cloned TREK2 channel expressed CHO cells. Fluoxetine (selective serotonin release inhibitor, SSRI) inhibited the TREK2 channel in a concentration-dependent manner ($IC_{50}$ $13{\mu}M$), whereas selective serotonin reuptake enhancer (SSRE) tianeptine increased without reducing the TREK2 channel activity. Haloperidol also inhibited the TREK2 channel in a concentration-dependent manner ($IC_{50}$ $44{\mu}M$), whereas even higher concentration ($100{\mu}M$) of risperidone did not completely inhibit on the activity. This study showed that TREK2 channel was preferentially blocked by fluoxetine rather than tianeptine, and inhibited by haloperidol rather than risperidone, suggesting differential effect of TREK2 channels by APD and AD may contribute to some mechanism of adverse side effects.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.10 s.253
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• pp.935-941
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• 2006

Many important properties in colloidal systems are usually determined by surface charge $({\zeta}-potential)$ of the contacted solid surface. In this study, ${\zeta}-potential$ of glass ${\mu}-channel$ was evaluated from the electro-osmotic velocity distribution. The electro-osmotic velocity inside a glass f-channel was measured using a micro-PIV velocity field measurement technique. This evaluation method is more simple and easy to approach, compared with the traditional streaming potential technique. The ${\zeta}-potential$ in the glass ${\mu}-channel$ was measured fur two different mole NaCl solutions. The effect of an anion surfactant, sodium dodecyl sulphate (SDS), on the electro-osmotic velocity and f-potential in the glass surface was also studied. In the range of $0{\sim}6mM$, the surfactant SDS was added to NaCl solution in few different mole concentrations. As a result, the addition of SDS increases ${\zeta}-potential$ in the surface of the glass ${\mu}-channel$. The measured $\zeta-potential$ was found to vary from -260 to -70mV. When negatively charged particles were used, the flow direction was opposite compared with that of neutral particles. The ${\zeta}-potential$ has a positive sign for the negative particles.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.149-158
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• 2007

Of all components of MCFC(molten carbonate fuel cell), corrosion of separator is one of the most decisive factor for commercializing of MCFC. In order to provide better understanding of corrosion behavior and morphology for gas channel of separator plate, post-analysis after cell operation for 1200 hours at $650^{\circ}C$ was performed by optical microscope, SEM and EPMA. Intergranular corrosion was observed on gas channel of separator plate. Corrosion product layer was identified as Fe-oxide, Cr-oxide and Ni-oxide by EPMA, and oxide thickness was measured with a $60{\mu}m-150{\mu}m$. Also, gas channel of separator was damaged by severe intergrannular attack with post analysis in consistent with immersion test. Moreover, pitting on the channel plate was observed with a depth of $18{\sim}24{\mu}m$. The results of immersion method are well agreement with post analysis measurements.

• The Korean Journal of Physiology and Pharmacology
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• v.5 no.6
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• pp.511-519
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• 2001

Nimopidine, one of dihydropyridine derivatives, has been widely used to pharmacologically identify L-type Ca currents. In this study, it was tested if nimodipine is a selective blocker for L-type Ca currents in sensory neurons and heterologous system. In mouse dorsal root ganglion neurons (DRG), low concentrations of nimodipine $(<10\;{\mu}M),$ mainly targeting L-type Ca currents, blocked high-voltage-activated calcium channel currents by ${\sim}38%.$ Interestingly, high concentrations of nimodipine $(>10\;{\mu}M)$ further reduced the 'residual' currents in DRG neurons from ${\alpha}_{1E}$ knock-out mice, after blocking L-, N- and P/Q-type Ca currents with $10\;{\mu}M$ nimodipine, $1\;{\mu}M\;{\omega}-conotoxin$ GVIA and 200 nM ${\omega-agatoxin$ IVA, indicating inhibitory effects of nimodipine on R-type Ca currents. Nimodipine $(>10\;{\mu}M)$ also produced the inhibition of both low-voltage-activated calcium channel currents in DRG neurons and ${\alpha}_{1B}\;and\;{\alpha}_{1E}$ subunit based Ca channel currents in heterologous system. These results suggest that higher nimodipine $(>10\;{\mu}M)$ is not necessarily selective for L-type Ca currents. While care should be taken in using nimodipine for pharmacologically defining L-type Ca currents from native macroscopic Ca currents, nimodipine $(>10\;{\mu}M)$ could be a useful pharmacological tool for characterizing R-type Ca currents when combined with toxins blocking other types of Ca channels.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.78-88
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• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.106-110
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• 1997

A new SOI NMOSFET with a 'LOCOS-like' shape self-aligned polysilicon gate formed on the recessed channel region has been fabricated by a mix-and-match technology. For the first time, a new scheme for implementing self-alignment in both source/drain and gate structure in recessed channel device fabrication was tried. Symmetric source/drain doping profile was obtained and highly symmetric electrical characteristics were observed. Drain current measured from 0.3${\mu}{\textrm}{m}$ SOI devices with V\ulcorner of 0.77V and Tox=7.6nm is 360$mutextrm{A}$/${\mu}{\textrm}{m}$ at V\ulcorner\ulcorner=3.5V and V\ulcorner=2.5V. Improved breakdown characteristics were obtained and the BV\ulcorner\ulcorner\ulcorner(the drain voltage for 1 nA/${\mu}{\textrm}{m}$ of I\ulcorner at V=\ulcorner\ulcorner=0V) of the device with L\ulcorner\ulcorner=0.3${\mu}{\textrm}{m}$ under the floating body condition was as high as 3.7 V. Problems for the new scheme are also addressed and more advanced device structure based on the proposed scheme is proposed to solve the problems.