• Title/Summary/Keyword: $\mu$-channel

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Nitric oxide(NO)-mediated relaxation of bovine retractor penis muscle (소 음경후인근의 Nitric oxide(NO) 매개성 이완)

  • Yang, Il-suk;Chang, Hee-jung;Kang, Tong-mook;Lee, Jang-hern
    • Korean Journal of Veterinary Research
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    • v.36 no.3
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    • pp.599-605
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    • 1996
  • This study was designed to examine the mechanism of penile erection in adult bull by analyzing the responses of bovine proximal retractor penile muscle strips(BRP) to electtical field stimulation(EFS), exogenous nitric oxide(NO), NO synthesis precursor(L-arginine), NO synthase inhibitors(L-NAME, L-NMMA), guanylate cyclase inhibitor(methylene blue) and nonspecific potassium channel blocker(tetraethylammonium, TEA) treatments. Isometric tension of BRP was measured using physiograph. Results were summarized as follows: 1. EFS of nonadrenergic noncholinrgic(NANC) nerve in BRP produced frequency-dependent inhibitory responses to the contraction induced by co-treatment of epinephrine, guanethidine and atropine. The inhibitory responses to EFS were blocked by tetrodotoxin(TTX, $1{\mu}M$). 2. Treatment of L-NAME ($10,\;20{\mu}M$) inhibited the relaxation to EFS whereas L-NMMA ($100{\mu}M$) had no effect. 3. Treatment of NO($20,\;40{\mu}M$; as an acidified solution of $NaNO_2$) induced concentration-dependent relaxation whereas preincubation of TTX($1{\mu}M$) and L-NAME($20{\mu}M$) had no effect on the relaxation response. 4. L-arginine treatment(10mM) blocked the inhibitory effect of L-NAME($20{\mu}M$). 5. Pretreatment of methylene blue($40{\mu}M$) reduced the NANC-induced relaxation of BRP. 6. Tetraethylammonium(TEA, 80mM) reduced NANC relaxation. These results suggest that NO may act as a NANC neurotransmitter in BRP and the effects might be mediated by cGMP and potassium channel.

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Fabrication of Micro-channels for Wave-Micropump Using Stereolithography and UV Photolithography (광조형법과 UV 포토리소그래피를 이용한 웨이브 마이크로펌프 미세 채널 제작)

  • Loh, Byoung-Gook;Kim, Woo-Sik;Shim, Kwang-Bo
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.12
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    • pp.128-135
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    • 2007
  • Micro-channels for a wave micropump have been fabricated using the Stereolithography and UV Photolithography. The micro-channel with a channel height of $500\;{\mu}m$ was fabricated with stereolithography. UV photolithography was used for producing micro-channels with a channel length less than $100\;{\mu}m$. The fabrication process data including spinning rpm, pre-bake and post-bake time, and develop time for single layer and multiple layer 3D micro-structures using SU-8 photo resist are experimentally found. A film mask printed with a 40,000 dpi laser printer was used for UV lithography and micro-structures in the order of tens of micrometers in dimension were successfully fabricated.

Hot Carrier Reliability of Short Channel ($L=1.5{\mu}m$) P-type Low Temperature poly-Si TFT

  • Choi, Sung-Hwan;Shin, Hee-Sun;Lee, Won-Kyu;Kuk, Seung-Hee;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.239-242
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    • 2008
  • We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

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A Channel Spacing-Tunable Sampled Fiber Gratings (채널 간격을 가변할 수 있는 샘플격자)

  • 조준용;김성춘;이경식
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.4
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    • pp.21-26
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    • 2003
  • In this paper, a channel spacing-tunable sampled fiber gratings(SFGs) is proposed, and analytically and experimentally investigated. The channel spacing of the proposed SFGs can be tuned by simply changing the period of the external pressure on the fiber Bragg gratings(FBGs). The channel spacing of 1.4nm was tuned to 0.8nm by changing the pressure period from 580${\mu}{\textrm}{m}$ to 1000${\mu}{\textrm}{m}$ The experimental results agree well with the theoretical results.

Fabrication of $1{\mu}$ m Gate GaAs MESFET and Analysis of Correlation Between DC Characteristics and Channel Parameters ($1{\mu}$ 게이트 GaAs MESFET의 제조 및 DC 특성과 채널 파라미터들 사이의 상호관게 분석)

  • 엄경숙;이유종;강광남
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.24 no.5
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    • pp.804-812
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    • 1987
  • 1\ulcorner gate MESFETs are fabricated on MOCVD and VPE grown GaAs wafers using photolithography, chemical wet etching and lift-off techniques. DC characteristics such as Vt, Gm, Rs, etc. are studied and active channel parameters of MESFET(a, n, Leff, \ulcorner)are analyzed for 1-4 \ulcorner gate FETs and 100\ulcorner FAT FET. The correlation between DC data and active channel parameters are experimentally analyzed. The measured transconductance and low-field mobility in the active channel for the 1\ulcorner gate MESFET made on MOCVD wafer are 67mS/mm and 2980cm\ulcornerVs respectively.

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C-V Characteristics in Nanometer Scale MuGFETs with Considering Quantum Effects (양자 현상을 고려한 나노미터 스케일 MUGFETS의 C-V 특성)

  • Yun, Se-Re-Na;Yu, Chong-Gun;Park, Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.11
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    • pp.1-7
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    • 2008
  • In this work, a two dimensional, self-consistent Poisson-$Schr{\ddot{o}}dinger$ solver has been implemented to study C-V characteristics in nanometer scale MuGFETs with considering quantum effects. The quantum-mechanical effects on gate-channel capacitance for different device dimension and gate configurations of nanometer scale MuGFETs have been analyzed. It has been found that 4he gate-channel capacitance per unit gate area is increased as the device dimension decreases. For different gate configurations, the gate-channel capacitance is decreased with increase of effective gate number. Those resu1ts have been explained by the distribution profile of electron concentration in the silicon surface and inversion capacitance. The length of inversion-layer centroid has been calculated from inversion capacitance with device dimension and gate configurations.

Response of $I_{Kr}$ and hERG Currents to the Antipsychotics Tiapride and Sulpiride

  • Jo, Su-Hyun;Lee, So-Young
    • The Korean Journal of Physiology and Pharmacology
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    • v.14 no.5
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    • pp.305-310
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    • 2010
  • The human $ether$-$a$-$go$-$go$-related gene ($hERG$) channel is important for repolarization in human myocardium and is a common target for drugs that prolong the QT interval. We studied the effects of two antipsychotics, tiapride and sulpiride, on hERG channels expressed in $Xenopus$ oocytes and also on delayed rectifier $K^+$ currents in guinea pig cardiomyocytes. Neither the amplitude of the hERG outward currents measured at the end of the voltage pulse, nor the amplitude of hERG tail currents, showed any concentration-dependent changes with either tiapride or sulpiride ($3{\sim}300{\mu}M$). However, our findings did show that tiapride increased the potential for half-maximal activation ($V_{1/2}$) of HERG at $10{\sim}300{\mu}M$, whereas sulpiride increased the maximum conductance ($G_{max}$) at 3, 10 and $100{\mu}M$. In guinea pig ventricular myocytes, bath applications of 100 and $500{\mu}M$ tiapride at $36^{\circ}C$ blocked rapidly activating delayed rectifier $K^+$ current ($I_{Kr}$) by 40.3% and 70.0%, respectively. Also, sulpiride at 100 and $500{\mu}M$ blocked $I_{Kr}$ by 38.9% and 76.5%, respectively. However, neither tiapride nor sulpiride significantly affected the slowly activating delayed rectifier $K^+$ current ($I_{Ks}$) at the same concentrations. Our findings suggest that the concentrations of the antipsychotics required to evoke a 50% inhibition of IKr are well above the reported therapeutic plasma concentrations of free and total compound.

A study on the process optimization of injection molding for replicability enhancement of micro channel (미세채널 전사성 향상을 위한 사출성형 공정최적화 기초연구)

  • Go, Young-Bae;Kim, Jong-Sun;Yu, Jae-Won;Min, In-Gi;Kim, Jong-Duck;Yoon, Kyung-Hwan;Hwang, Cheul-Jin
    • Design & Manufacturing
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    • v.2 no.1
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    • pp.45-50
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    • 2008
  • Micro channel is to fabricate desired pattern on the polymer substrate by pressing the patterned mold against the substrate which is heated above the glass transition temperature, and it is a high throughput fabrication method for bio chip, optical microstructure, etc. due to the simultaneous large area patterning. However, the bad pattern fidelity in large area patterning is one of the obstacles to applying the hot embossing technology for mass production. In the present study, stamper of cross channel with width $100{\mu}m$ and height $50{\mu}m$ was manufactured using UV-LiGA process. Micro channel was manufactured using stamper manufactured in this study. Also replicability appliance was evaluated for micro channel and factors affected replicability were investigated using Taguchi method.

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Action of Dammarane-Type Triterpenoidal Glycosides and Their Aglycones on Lipid Membranes (지질막에 대한 Dammarane-Type Triterpenoidal Glycosides와 그 Aglycones의 작용)

  • Kim, Yu.A.;Park, Kyeong-Mee;Hyun, Hack-Chul;Song, Yong-Bum;Shin, Han-Jae;Park, Hwa-Jin
    • Journal of Ginseng Research
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    • v.20 no.3
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    • pp.269-273
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    • 1996
  • We investigated the effects of ginseng glycosides and their aglycones on processes of single ion channel formation and channel properties. The glycosides, Rg, and Rb, , and their aglycones, 20-(S)-protopanaxatriol (PT) and 20-(S)-protopanaxadiol (PD) increased the membrane permeability for ions. PT, PD, Rg1, and Rb1; at concentrations of 0.5, 3.0, 10.0 and 30.0 $\mu\textrm{g}$/ml respectively; Induced single ion channel fluctuations with the life times in the range of 0.1~1005 in open states and conductances from 5 to 30 pS in 1 M KCI. At high concentrations of these substances, rapid fluctuations of transmembrane ion current with amplitude from hundred pS to dozen nS were observed. Against other substances, ginsenoside Rbl began to increase the membrane conductance at concentration of about 60 $\mu\textrm{g}$/ml without fluctuation of single ion channel. Membranes treated with PT, PD, Rg1 and Rb1 are more permeable to K+, than to Cl while zero current membrane potentials with 10 gradients of KCI were 12, 16, 8, 25 mV respectively. Key words : Membrane conductance, single ion channel, ginsenosides.

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Pentacene Thin Film Transistors Fabricated by High-aspect Ratio Metal Shadow Mask

  • Jin, Sung-Hun;Jung, Keum-Dong;Shin, Hyung-Chul;Park, Byung-Gook;Lee, Jong-Duk;Yi, Sang-Min;Chu, Chong-Nam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.881-884
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    • 2004
  • The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

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