• Journal of the Korean Society for Heat Treatment
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• v.6 no.2
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• pp.89-97
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• 1993

An improvement in corrosion resistance of various types of Zn-coated steel sheets is thought to be possible with the addition of fine oxide powder to the coating. In this study the corrosion resistance of the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheet has been investigated and the results were as follows : The corrosion resistance of $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheets was improved by increasing the contents of Co and Cr ions, and also $Al_2O_3$ powders in the bath because of the increased amount of Co, Cr and $Al_2O_3$ in deposits. In the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steels sheet, the structure of deposits was changed from fine microstructure as observed in high Co containing deposits to coarse microstructure as in high Cr and $Al_2O_3$ containing deposits. By cold rolling of the $Al_2O_3$ dispersed Zn-Co-Cr electroplated steel sheets to about 2 percent, thr corrosion resistance was improved further.

• Preventive Nutrition and Food Science
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• v.8 no.4
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• pp.390-394
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• 2003

In the post-genome period, the technique for identifying gene expression has been progressed to high throughput screening. In the field of molecular nutrition, the use of screening techniques to clarify molecular function of specific nutrients would be very advantageous. In this study, we have evaluated Zn-regulated gene expression in Zn-deficient, homocystein-treated EA.hy926 cells, using cDNA microarray, which can be used to screen the expression of many genes simultaneously. The information obtained can be used for preliminary assessment of molecular and signaling events modulated by Zn under pro-atherogenic conditions. EA.hy926 cells derived from human umbilical vein endothelial cells were cultured in Zn-adequate (control, 15 $\mu$M Zn) or Zn-deficient (experimental, 0 $\mu$M Zn) Dulbecco's MEM media under high homocysteine level (100 $\mu$M) for 3 days of post-confluency. Cells were harvested and RNA was extracted. Total RNA was reverse-transcribed and the synthesized cDNA was labeled with Cy3 or Cy5. Fluorescent labeled cDNA probe was applied to microarray slides for hybridization, and the slide was then scanned using a fluorescence scanner. The expression of seven genes was found to be significantly decreased, and one significantly increased, in response to treatment of EA.hy926 cells with Zn-deficient medium, compared with Zn-supplemented medium. The upregulated genes were oncogenes and tumor suppressor genes, cell cycle-related genes and transporter genes. The down-regulated gene was RelB, a component of the NF-kappaB complex of transcription factors. The results of this study imply the effectiveness of cDNA microarray for expression profiling of a singly nutrient deficiency, namely Zn. Furthur study, using tailored-cDNA array and vascular endothelial cell lines, would be beneficial to clarify the molecular function of Zn in atherosclerosis, more in detail.

• Solar Energy
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• v.17 no.3
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• pp.51-57
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• 1997

Cu-doped ZnTe thin films have been grown by hot-wall evaporation. The electrical conductivity of the intrinsic ZnTe film was of p-type and as low as $10^{-6}({\Omega}{\cdot}cm)^{-1}$. As the doped Cu concentration was increased, the electrical conductivity was increased. up to $10^2({\Omega}{\cdot}cm)^{-1}$, but the mobility was decreased a little. The heavily doped sample shows the metal-like electrical resistivity.

• Progress in Superconductivity
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• v.13 no.2
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• pp.90-96
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• 2011

We investigated the properties of artificial pinning centers of YBCO multilayer films in which $Y_2O_3$ and ZnO nanoparticles are uniformly introduced by using the pulsed laser deposition (PLD) technique. $Y_2O_3$ and ZnO nanoparticles were deposited on top of YBCO buffer layer and the density of nanoparticles was controlled by varying the number of nanoparticle layers. YBCO superconducting layers with total thickness of 250 nm were deposited on top of $Y_2O_3$ and ZnO nanoparticles. Based on analyses of the surface morphology, the transition temperature $T_c$, and the critical current density $J_c$, we discussed the difference between the two kinds of nanoparticles as flux pinning centers.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.

• Journal of the Korean Magnetics Society
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• v.11 no.6
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• pp.256-261
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• 2001

These experiments were carried out to examine the effects of element substitution of Zn and La-Zn for Sr-ferrite. The calcined properties of Zn and La-Zn element substitution were examined, and also the sintered magnetic properties were compared with the stoichiometric condition. The magnetization properties of calcined SrM materials is as follows; M$\_$s/ : 61.06 emu/g. Also, the magnetization properties of calcined Zn$\_$0.3/-SrM materials is as follows; M$\_$s/ : 66.90 emu/g. The sintered magnetic properties of (La-Zn)$\_$0.3/-SrM composition is as follows; B$\_$r/ : 4.21 kG, BH$\_$max/: 4.19 MGOe.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.294-302
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• 2023

Ni-Mn-Zn ferrite, Ni_0.5-xMn_xZn_0.5Fe₂O₄ (0 ≤ x ≤ 0.5), was synthesized using the sol-gel method to investigate the crystal structure, microstructure, magnetic properties, high-frequency characteristics, and electromagnetic (EM) wave absorption characteristics as a function of Mn substitution. As the Mn content increased, a continuous decrease in saturation magnetization (M_S) was observed with little change in coercivity (H_C). Samples for each composition (x) exhibited strong EM wave absorption performance with first and second strong EM wave absorption regions satisfying minimum reflection loss, RL_min < -40 dB in the 1.5~2.5, 6~11 GHz range, respectively. The EM wave absorption in Ni-Mn-Zn ferrite depends on magnetic loss, and adjusting µ' and µ'' spectra by Mn substitution or H field allows control of the EM wave absorption frequency.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.11-12
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• 2012

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.10
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• pp.831-835
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• 2014

The relative concentration of surface and interfacial defects in hydrothermally grown ZnO nanostructures was investigated by a comparison of two samples having different growth temperatures via bias voltage sweep rate under laser illumination of 405 and 355 nm. The current of small ZnO nanostructures (growth temperature of $75^{\circ}C$) decreased when induced more slowly bias voltage sweep rate under the laser illumination. In contrast, the current of large ZnO nanostructures (growth temperature of $90^{\circ}C$) increased. This difference in currents indicates the relation of relative defects concentration between surface and interfacial defects of ZnO nanostructure. Our experimental approach has potential applicability in the analysis of influence on defects in ZnO devices.