• 한국세라믹학회지
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• 제24권2호
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• pp.147-154
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• 1987

Silicon nitride powders were prepared by the simultaneous reduction and nitridation from powder mixtures of Kim cheon quartzite and carbon (graphite or carbon black) at1400$^{\circ}C$ for 10 hours in nitrogen atmosphere. The effects of the reaction variables on the yield of products and on the ${\alpha}$/${\beta}$ ratio were examined. The average particle size, density, and the ${\alpha}$/${\beta}$ ratio of the obtained si3N4 were 1.0$\mu\textrm{m}$, 3.10g/㎤ and 90/10, respectively. It was found that the Si3N4 powders obtained in this work were comparable to the foreign commercial products.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.15-15
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• 2011

As you know, boron compounds, borax ($Na_2B_4O_5(OH)_4{\cdot}8H_2O$) etc. were known thousands of years ago. As for natural boron, it has two naturally occurring and stable isotopes, boron 11 ($^{11}B$) and boron 10 ($^{10}B$). The neutron absorption $^{10}B$ is included about 19~20% with 80~81% $^{11}B$. Boron is similar to carbon in its capability to form stable covalently bonded molecular networks. The mass difference results in a wide range of ${\beta}$ values between the $^{11}B$ and $^{10}B$. The $^{10}B$ isotope, stable with 5 neutrons is excellent at capturing thermal neutrons. For example, it is possible to decrease a thermal neutron required for the nuclear reaction of uranium 235 ($^{235}U$). If $^{10}B$ absorbs a neutron ($^1n$), it will change to $^7Li+^1{\alpha}$ (${\alpha}$ ray, like $^4He$) with prompt ${\gamma}$ ray from $^{11}B$ $^{11}B$ (equation 1). $$^{10}B+^1n\;{\rightarrow}\;^{11}B\;{\rightarrow}\; prompt \;{\gamma}\;ray (478 keV), \;^7Li+4{\alpha}\;(4He)\;\;\;\;{\cdots}\; (1)$$ If about 1% boron is added to stainless steel, it is known that a neutron shielding effect will be 3 times the boron free steel. Enriched boron or $^{10}B$ is used in both radiation shielding and in boron neutron capture therapy. Then, $^{10}B$ is used for reactivity control and in emergency shutdown systems in nuclear reactors. Furthermore, boron carbide, $B_4C$, is used as the charge of a nuclear fission reaction control rod material and neutron cover material for nuclear reactors. The $B_4C$ powder of natural B composition is used as a charge of a control material of a boiling water reactor (BWR) which occupies commercial power reactors in nuclear power generation. The $B_4C$ sintered body which adjusted $^{10}B$ concentration is used as a charge of a control material of the fast breeder reactor (FBR) currently developed aiming at establishment of a nuclear fuel cycle. In this study for new boron compound, silicon boride ceramics for capturing thermal neutrons, preparation and characterization of both silicon tetraboride ($SiB_4$) and silicon hexaboride ($SiB_6$) and ceramics produced by sintering were investigated in order to determine the suitability of this material for nuclear power generation. The relative density increased with increasing sintering temperature. With a sintering temperature of 1,923 K, a sintered body having a relative density of more than 99% was obtained. The Vickers hardness increased with increasing sintering temperature. The best result was a Vickers hardness of 28 GPa for the $SiB_6$ sintered at 1,923K for 1 h. The high temperature Vickers hardness of the $SiB_6$ sintered body changed from 28 to 12 GPa in the temperature range of room temperature to 1,273 K. The thermal conductivity of the SiB6 sintered body changed from 9.1 to 2.4 W/mK in the range of room temperature to 1,273 K.

• 한국주조공학회지
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• 제17권6호
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• pp.560-568
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• 1997

The dissolution behavior of secondary solidification phases in squeeze cast Al-3.9wt%Cu-1.5wt%Si-1.0wt%Mg has been studied using a combination of optical microscope, image analyzer, scanning electron microscope(SEM), energy dispersive spectrometer(EDS), X-ray diffractometer(XRD) and differential thermal analyzer (DTA). Special emphasis was placed on the investigation of the effects of the nonequilibrium heat treatment on the dissolution of the second solidification phases. Ascast microstructure consisted of primary solidification product of ${\alpha}-Al$ and secondary solidification products of $Al_2Cu$, $Mg_2Si$ and $Al_2CuMg$. Equilibrium and non-equilibrium solution treatments were carried out at the temperatures of $495^{\circ}C$, $502^{\circ}C$ and $515^{\circ}C$ for 3 to 5 hours. The amount of the dissolved secondary phases increased with increasing solution treatment temperature, for example, area fractions of $Al_2Cu$, $Mg_2Si$ and $Al_2CuMg$ were approximately 0%, 1.6% and 4.2% after solution treatment at $495^{\circ}C$ for 5hours, and were approximately 0%, 0.36% and 2% after solution treatment at $515^{\circ}C$ for 5hours. The best combination of tensile properties was obtained when the as-cast alloy was solution treated at $515^{\circ}C$ for 3hours followed by aging at $180^{\circ}C$ for 10 hours. Detailed DTA and TEM study showed that the strengthening behavior during aging was due to enhanced precipitation of the platelet type fine ${\theta}'$ phase.

• 한국재료학회지
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• 제11권12호
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• pp.1068-1073
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• 2001

An n-type iron$silicide(Fe_{0.98}Co_{0.02}Si_2)$has been produced by mechanical alloying process and consolidated by vacuum hot pressing. Although as-milled powders after 120 hours of milling did not show an alloying progress,${\beta}-FeSi_2$phase transformation was induced by isothermal annealing at$830{\circ}C$for 1 hour, and the fully transformed${\beta}-FeSi_2$phase was obtained after 4 hours of annealing. Near fully dense specimen was obtained after vacuum hot pressing at$ 1100{\circ}C$with a stress of 60MPa. However, as-consolidated iron silicides were consisted of untransformed mixture of ${\Alpha}-Fe_2Si_5$and ${\varepsilon-FeSi$phases. Thus, isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting${\beta}-FeSi_2$phase. The condition for${\beta}-FeSi_2$transformation was investigated by utilizing DTA, SEM, and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at$830{\circ}C$and the transformation behaviour was investigated as a function of annealing time. The mechanical properties of${\beta}-FeSi_2$materials before and after isothermal annealing were characterized in this study.

• Bulletin of the Korean Chemical Society
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• 제14권3호
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• pp.318-319
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• 1993

• 한국자기학회지
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• 제10권5호
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• pp.191-195
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• 2000

Fe$_{78}$Si$_{9}$B$_{13}$ 비정질 합금을 스위칭 전원의 평활용 쵸크 코어로 사용하기 위한 최적 열처리 조건을 조사하였다. 코어의 모양은 자기경로 상에 공극을 넣지 않는 무공극형으로 하였으며, 보다 효과적으로 쵸크 코어 특성을 얻기 위해 산화 분위기 중에서 열처리하였다. 이 합금에서 가장 양호한 쵸크 코어 특성은 44$0^{\circ}C$, 2시간의 열처리에 의하여 얻어졌으며, 그 때의 실효투자율은 180 정도로서 수 MHz의 높은 주파수 영역에 이르기까지 그 크기가 일정하게 유지되었다. 또 12A가지의 직류 바이어스 전류 또는 8,000 A/m의 직류 바이어스 자장을 가하여도 실효투자율의 저하가 나타나지 않는 우수한 직류중첩 특성을 나타내었다. 그리고 교류 자심 손실도 종래의 쵸크 코어에 비해 상당히 낮은 것으로 나타났다. 이와 같은 열처리 조건하에서 비정질상은 미세한 $\alpha$-Fe 결정상의 석출 입자를 포함하는 혼합상으로 변태하는데 , 상기의 쵸크코어 특성은 주로 이들 미세 결정 입자에 의해 효과적으로 자벽 이동이 억제되고 자구가 미세화 되는 것에 기인하는 것으로 생각되었다.

• 한국세라믹학회지
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• 제36권4호
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• pp.432-443
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• 1999

The self-toughened Si3N4 ceramics where needle-like coarse ${\beta}$-Si3N4 grains were dispersed within fine-grain-ed matrix were prepared via hot-prssing at 1730$^{\circ}C$ for 2 h using 5 vol% ${\beta}$-Si3N4 whiskers as a seed. In this study the microstructures and mechanical properties of self-toughened Si3N4 ceramics were investigated. The flexural strength of self-toughened Si3N4 ceramics was increased from 600-800 MPa of the Si3N4 monolith to 830-1025 MPa. The KIC was also increased from 4.0-5.0MPa$.$m1/2 of the Si3N4 monolith to 5.8-6.5MPa$.$m1/2$.$The needle-like coarse Si3N4 grains in self-toughened ceramics were considered to induce various toughening mechanisms including the crack deflection pull-out and bridging and to contribute to KIC improvement. In ad-dition to toughening mechanisms the KIC improvement was considered to be partially indebted also to the orien-tation of large ${\beta}$-Si3N4 grains and to the promoting effect of ${\beta}$-Si3N4 whiskers on the ${\alpha}$ to ${\beta}$ transtion.

• 한국자기학회지
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• 제11권1호
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• pp.21-25
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• 2001

Si 기판 위에 $\alpha$-Fe$_2$O$_3$ 박막을 pulsed laser deposition system으로 제조하여 결정학적 및 자기적 성질을 X선 회절 및 Mossbauer 분광법을 사용하여 연구하였다. 박막의 제조조건은 laser의 출력 5.128 W/$cm^2$, 산소의 압력 0.1 torr, 기판의 온도 30$0^{\circ}C$에서 가장 이상적이었으며 이를 공기 중 80$0^{\circ}C$에서 1일간 열처리하였다. 입자는 크기는 길이 200~300nm, 폭 70-150 nm정도의 타원체로 기판에 비스듬히 누운 형태를 취하고 있으며 결정은 육방정계 형태의 corundum 구조로서 결정상수는 a = 5.03 0.05 $\AA$, c = 13.73$\pm$0.05 $\AA$로 측정되었다. 원자의 스핀 방향은 감마선 방향(기판에 수직 방향)에 대하여 평균적으로 Morin 변환 이하에서는 38$^{\circ}$, 그 이상에서는 48$^{\circ}$의 각을 이루며 특정한 방향을 선호하고있는 것으로 나타났다. Morin 변환은 200 K에서 실온가지 넓은 온도 범위에서 일어나며, c-축에 대한 원자의 스핀 방향은 48$^{\circ}$에서 80$^{\circ}$정도의 변화만이 관측되었다.

• 한국표면공학회지
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• 제33권2호
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.