• 한국세라믹학회지
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• 제31권6호
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• pp.651-659
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• 1994

BaTiO3 ceramics were sintered on Al2O3, MgAl2O4, MgO and Mg-, Ca-, Y-stabilized zirconia setters. Then the influence of setters on the microstructure of BaTiO3 ceramics and the stability of setters were investigated by SEM, EDAX and XRD analyses. The microstructure of BaTiO3 ceramics sintered on Al2O3, MgAl2O4, MgO and Mg-PSZ showed large grain growth, but little grain growth on Ce-TZP(Tetragonal Zirconia Policrystal). Mg-PSZ(Partially Stabilized Zirconia), Ca-PSZ, Ce-TZP setters showed extensive phase transformation. Y-TZP and fused Y-SZ (Stabilized Zirconia) setters were stable. The liquid sintering aids of BaTiO3 ceramics accelerate mass transport. The reaction of SrTiO3 in BaTiO3 with ZrO2 resulted in the formation of SrZrO3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.256-259
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• 1996

$(Sr_{1-x}{\cdot}Ca_x)TiO_3+yNb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.004$1350[^{\circ}C]$ in a reducing atmosphere($N_2$ gas). Dielectric propertries were investigated with contents of $Nb_2O_5$. The grain size and dielectric constant increase with increase $Nb_2O_5$, but decrease in $Nb_2O_5$ exceed($Nb_2O_5=0.6[mol%]$). Also, the temperature characteristics of the dielectric loss factor exhibited a stable value within 0.5[%]. The capacitance characteristics appeals a stab]e value in ${\pm}10[%]$.

• 한국결정성장학회지
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• 제20권1호
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• pp.21-24
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• 2010

고주파 유전체 세라믹 $(Ca_{0.7}Sr_{0.3})_m(Ti_yZr_{1-y})O_3$ 의 미세구조 및 전기적 특성에 대한 Ti 이온 및 몰비의 영향을 조사하였다. $CaZrO_3$의 Zr 위치에 Ti 이온의 치환은 세라믹 소체의 소결밀도 및 미세구조에 큰 영향을 미친다. Zr 위치에 Ti 이온의 치환량 증가에 따라, 소결밀도는 급격히 증가하고, 몰비 m=1.01에서 치밀한 미세조직이 얻어졌다. 한편, 몰비 m=0.99 조성에 대해서는 Ti 치환량이 증가하여도 소결밀도 및 미세구조는 거의 변화가 없이 일정하였다. Ti 치환량 증가에 따라 TCC (temperature coeITicient of capacitance) 곡선은 시계방향으로 회전하여 몰비 m=0.99, 1.01 조성에 대해 COG 특성을 만족하였다. $CaZrO_3$의 TCC 및 소결특성 제어를 위해서는 Ti 치환량이 몰비보다는 효과적임을 보여준다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.171.2-171.2
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• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.645-651
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• 2008

To reduce noise in high frequency and distortion of signal, the composition of $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$ and $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ was developed. The composition was not solid solution, but mixtures of various phases composed of Ca, Sr, Zr, Ti and Ba oxides. The dielectric constant increased, the quality factor and the insulation resistance decreased with $(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ content. The composition of $0.4(Ba_{0.2}Ca_{0.4}Sr_{0.4})TiO_3$ satisfied the electric characteristics and the temperature coefficient of dielectric constant (TCC). In addition, the glass frit and $MnO_2$ also affected the electric characteristics. From the result of the best fit simulation, $MnO_2$ 0.3 mol%, the glass frit 0.6 wt% showed the insulation resistance $906{\Omega}{\cdot}F$, the quality factor 821, and the dielectric constant 92. With the selected composition, MLCC capacitors sized $4.5{\times}3.2{\times}2.5mm$ were manufactured with 105 layered of the dielectric thickness $16{\mu}m$ using Ni inner electrode, They represented the capacitance $98{\sim}102$ nF, the quality factor 1,200 and the insulation resistance $1,500{\Omega}{\cdot}F$. Also, they had high break-down voltage with $107{\sim}115V/{\mu}m$, and satisfied the SL TCC characteristics.

• 청정기술
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• 제23권1호
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• pp.95-103
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• 2017

본 연구는 비 $TiO_2$ 계 광촉매 중 가장 널리 알려져 있는 $ATiO_3$ (A = Ca, Sr, Ba) perovskite를 sol-gel 법을 이용해 합성하였고, 골격치환이 용이한 점을 이용해 A site에 Ni을 첨가한 입자를 합성하였다. 합성한 $ATiO_3$와 Ni-$ATiO_3$ 입자의 불리화학적 특성은 X-선 회절분석(XRD), 자외선-가시선 분광광도계(UV-visible spectroscopy), 주사전자현미경 (SEM), 에너지분산형 분광분석법(EDS), 질소 등온 흡 탈착실험, X선 광전자분광법(XPS)을 이용해 확인하였다. 수소제조는 메탄올을 광분해하여 얻었으며, $ATiO_3$ 보다 Ni-$ATiO_3$ 촉매에서 높은 수소발생량을 나타내었다. 특히 Ni-$SrTiO_3$ 촉매를 사용하였을 때 24시간 반응 후 $273.84mmolg^{-1}$의 수소가 발생하였다. 또한 Ni-$SrTiO_3$ 촉매는 물(0.1 M KOH)을 분해하였을 때에도 높은 수소 제조 성능을 나타냈으며, 24시간 반응 후 $961.51mmolg^{-1}$의 수소가 발생한 것을 확인하였다.

• 한국전기전자재료학회논문지
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• 제11권11호
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• pp.984-989
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• 1998

The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1001-1004
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• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.