Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Microstructure and Dielectric Properties of ($Sr_{1-x}Ca_x)TiO_3$ Ceramic Thin Film by RF Sputtering Method

RF 스퍼터링법에 의한 ($Sr_{1-x}Ca_x)TiO_3$ 세라믹 박막의 미세구조 및 유전특성

  • 김진사 (광운대학교 공대 전기공학과) ;
  • 오재한 (성화대학 전기과) ;
  • 이준웅 (광운대학교 공대 전기공학과)
  • Published : 1998.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

Keywords

References

  1. J. Am. Ceram. Soc. v.65 no.11 Dielectric Properties of Ceramics in the system ($Sr_{0.5}Pb_{0.25}Ca_{0.25}$)TiO₃-Bi₂O₃3TiO₂ and Their Applications SUSUMU NISHIGAKI;KANJI MURANO(et al.)
  2. J. Vac. Sci.&Technol. v.20 no.3 Internal Stresses in Cr, Mo, Ta, and Pt Films Deposited by Sputtering from a Planar Magnetron Sources D. W. Hoffman;J. A. Thorton
  3. MRS Symposium Proceeding v.202 Microstructural Changes during Processing of Laser Deposited BaTiO₃ and PZT Thin films L. P. Cook;M. D. Vaudin(et al.)
  4. Thin Solid Flims v.176 The Influence of structure on the Piezoelectric properties of BaTiO₃and (BaSr)TiO₃Thin Films with a Diffuse Phase Transition Z. Surowiak;A. M. Margolin;I. N. Zaharochenoko;S. V. Biryukov
  5. ニュケラス ⑦ 半導體 セラミクスと その 應用 ニュ-ケラスシリ-ス 編輯委員會(編)
  6. Ceramic Dielectrics and Capacitors J. M. Herbert
  7. Advances in Ceramics v.1 Two-Layer Model Explaining the Properties of SrTiO₃Boundary Layer Capacitor R. Wernicke;L. M. Levinson(ed.);D. C. Hill(ed.)
  8. J. Appl. Phys. v.41 Dielectric Relaxation in Strontium Titanates Containing Rare-Earth Lons W. Johnson;L.E. Cross;F.A. Hummel
  9. J. Phys. Chem. Solids v.11 Dielectric Properties of Single Crystals of SrTiO₃at Low Temperatures H. E. Weaver
  10. Advances in Ceramics v.1 Two-Layer Model Explaining the properties of SrTiO₃Boundary Layer Capacitor R. Wernicke