Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dielectric Properties of PZT(20/80)PZT(80/20) Heterolayered Thin Films Prepared by Sol-Gel Technique

Sol-Gel법으로 제조한 PZT(20/80)/PZT(80/20) 이종층 박막의 유전특성

  • 이성갑 (서남대학교 전자재료공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Published : 1998.11.01
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Abstract

본 연구에서는 PZT(20/80)과 PZT(80/20) 금속 alkoxide용액을 Pt/Ti/$SiO_2$/Si 기판위에 상호 반복시킨 강유전성 PZT(20/80)/PZT(80/20) 이종층 박막을 제작하였다. 건조와 소결을 한번 행한 PZT 이종층 박막의 평균 두께는 약 80~90 nm이었다. 제작된 모든 PZT 박막은 rosette상이 없는 치밀하고 균질한 미세구조를 나타내었으며, 하부의 PZT층은 열처리시 상부 PZT층은 열처리시 상부 PZT 박막의 페로브스카이트 형성에 대해 nucleation site로 작용하였다. 유전상수, 피로특성 및 누설전류특성 등은 단일 조성의 PZT(20/80), PZT(80/20) 박막에 비해 우수한 특성을 나타내었다.

Keywords

References

  1. Jap. J. Appl. Phys. v.34 Effect of Substrate Temperature on Electrical Characteristics of (Pb,La)(Zr,Ti)O₃ Ultrathin Films Deposited by Metalorganic Chemical Vapor Deposition S. Hazumi;T. Asano;M. Hattori;H. Nakashima;I. Kobayashi;M. Okada
  2. J. Mat. Res. v.7 Composition/Structure/Property Relations of Multi-Ion-Beam Reactive Sputtered Lead Lanthanum Titanate Zirconate Thin Films, Part Ⅰ.Composition and Structure Analysis G. R. Fox;S. B. Krupanidhi;K. L. More;L. F. Allard
  3. MRS Sym. Proc. v.200 Ferroelectric Thin Films Deposition by Laser Ablation K. Ramkumar;J. Lee
  4. Proc. Br. Ceram. Soc. v.36 Sol-Gel Processing of PbTiO₃, PbZrO₃, PZT, PLZT Thin Films K. D. Budd;S. K. Dey;D. A. Payne
  5. Jpn. J. Appl. Phys. v.33 Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived $PbZr_xTi_{1-x}O_3$ Thin Films H. Doi;T. Atsuki;N. Soyama;G. Sasaki;T. Yonezawa;K. Ogi
  6. Jpn. J. Appl. Phys. v.35 Electrical Comparison of Sol-Gel Derived Lead-Zirconate-Titanate Capacitors with Ir and Pt Electrodes K. Aoki;Y. Fukuda;K. Numata;A. Nishimura
  7. Jpn. J. Appl. Phys. v.33 Dielectric Properties of Multilayered Ferroelectric Thin Films Fabricated by Sol-Gel Method Y. Ohya;T. Ito;Y. Takahashi
  8. Jpn. J. Appl. Phys. v.32 Low Temperature Preparation of Pb(Zr,Ti)O₃ Thin Films on (Pb,La)TiO₃Buffer Layer by Multi-Ion-Beam Sputtering I. Kanno;S. Hayashi;T. Kameda;M. Kitakawa;T. Hirao
  9. Jpn. J. Appl. Phys. v.32 Preparation and Basic Properties of BaTiO₃-BaPbO₃Multilayer Thin Films by Metal-Alkoxides Method T. Azuma;S. Takahashi;M. Kuwabara
  10. Integrated Ferroelectrics v.5 Nucleation and Orientation of Sol-Gel PZT Film on Pt Electrodes G. J. Willems;D. J. Wouters;H. E. Maes
  11. Proc. ISAF-92 Effect of Zr/Ti Stoichiometry Ratio on the Ferroelectric Properties of Sol-Gel Derived PZT Films G. Teowec;J. M. Boulton;E. A. Knecr;M. N. Orr;D. P. Birinie Ⅲ;D. R. Uhlman;S. C. Lee;K. F. Galoway;R. D. Schrimpf
  12. Jpn. J. Appl. Phys. v.33 Fatigue and Refreshment of (Pb,La)(Zr,Ti)O₃Thin Films by Multiple Cathode Sputtering H. Maiwa;N. Ichinose;K. Okazaki
  13. Jpn. J. Appl. Phys. v.32 Dielectric Constant and Leakage Current of Epitaxially Grown and Polycrystalline SrTiO₃Thin Films K. Abe;S. Komatsu