• 한국지구과학회지
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• 제27권1호
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• pp.49-60
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• 2006

본 연구는 나주지역 하상퇴적물에 대한 지구화학적 특성 연구이다. 이를 위해 1차 수계를 대상으로 139개의 하상퇴적물 시료를 채취하였다. 채취된 시료는 실험실에서 자연 건조시켰으며, XRF, ICP-AES, NAA를 이용하여 화학분석을 실시하였다. 기반암에 따른 지구화학적 특성을 알아보기 위하여, 화강암질편마암 지역, 편암류 지역, 화강암류 지역, 사질암 지역, 응회암 지역, 안산암 지역, 유문암 지역으로 분류하였다. 나주지역 하상퇴적물의 지질집단별 주성분원소 평균함량은 $SiO_2\;58.37{\sim}66.06wt.%,\;Al_2O_3\;13.98{\sim}18.41wt.%,\;Fe_2O_3\;4.09{\sim}6.10wt.%,\;CaO\;0.54{\sim}1.33wt.%,\;MgO\;0.86{\sim}1.34wt.%,\;K_2O\;2.38{\sim}4.01wt.%,\;Na_2O\;0.90{\sim}1.32wt.%,\;TiO_2\;0.82{\sim}1.03wt.%,\;MnO\;0.09{\sim}0.15wt.%,\;P_2O_5\;0.11{\sim}0.18wt.%$이다. 주성분원소의 평균함량 비교에서 $Al_2O_3$와 $K_2O$는 화강암질편마암 지역에서, $Fe_2O_3,\;CaO,\;P_2O_5$는 응회암 지역에서, MgO와 $TiO_2$는 안산암 지역에서, $Na_2O$는 유문암 지역에서 높고, $SiO_2$와 MnO 함량은 사질암 지역에서 약간 높다. 미량성분 및 희토류원소의 지질집단별 평균함량은 $Ba\;1278{\sim}1469ppm,\;Be\;1.1{\sim}1.5ppm,\;Cu\;18{\sim}25ppm,\;Nb\;25{\sim}37ppm,\;Ni\;16{\sim}25ppm,\;Pb\;21{\sim}28ppm,\;Sr\;83{\sim}155ppm,\;V\;64{\sim}98ppm,\;Zr\;83{\sim}146ppm,\;Li\;32{\sim}45ppm,\;Co\;7.2{\sim}12.7ppm,\;Cr\;37{\sim}76ppm,\;Cs\;4.8{\sim}9.1ppm,\;Hf\;7.5{\sim}25ppm,\;Rb\;88{\sim}178ppm,\;Sc\;7.7{\sim}12.6ppm,\;Zn\;83{\sim}143ppm,\;Pa\;11.3{\sim}37ppm,\;Ce\;69{\sim}206ppm,\;Eu\;1.1{\sim}1.5ppm,\;Yb\;1.8{\sim}4.4ppm$이다. Pb, Li, Cs, Hf, Rb, Sb, Pa, Ce, Eu, Yb 평균함량은 화강암질편마암 지역에서, Ba, Co, Cr 평균함량은 편암류 지역에서, Nb, Ni, Zr 평균함량은 사질암 지역에서, Sr 평균함량은 응회암 지역에서 높고, Be, Cu, V, Sc, Zn 평균함량은 안산암 지역에서 다른 지질집단에서 보다 높다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1504-1506
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• 2002

$(Ba_{0.6-x}-Sr_{0.4}Ca_x)TiO_3$ (x=0.10, 0.15, 0.20, y=$0.0{\sim}3.0$) powders were fabricated by the sol-gel method, and BSCT thick films were fabricated by the silk-screen printing method. Their structural and dielectric properties were investigated with variation of composition ratio. All BSCT thick films showed a homogeneous structure without presence of the second phase. BSCT film thickness, obtained by three cycle of printing, was approximately $80{\mu}m$. The dielectric constant and dielectric loss of the 3-coated BSCT(50/40/10) thick film were approximately 1700 and 0.07%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.274.2-274.2
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• 2007

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.116.2-116
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• 2002

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 암석학회지
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• 제27권1호
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• pp.37-47
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• 2018

백두산에서 역사시대에 분화한 화산재의 시료에 대하여 다양한 방법으로 주성분과 미량성분을 분석하였다. 화산재의 주성분 원소 함량은 $SiO_2$ 58.8~71.1 wt.%, $Al_2O_3$ 9.6~16.8 wt.%, ${Fe_2O_3}^T$ 4.5~6.9 wt.%, MgO 0.1~1.7 wt.%, CaO 0.3~1.6 wt.%, $Na_2O$ 5.2~6.3 wt.%, $K_2O$ 4.3~5.9 wt.% 그리고 $TiO_2$ 1.2 wt.%이하로 분석되었다. Ba, Cu, Cr. Co, Ni, Sr, V, Zn와 Zr을 포함하는 32개 미량원소가 분석되었는데, 이들 화산재는 일부 미량원소와 경희토류 원소의 부화정도에 따라 두 그룹(그룹 A, 그룹 B)으로 구분되며, 그룹 A에는 1천년 전의 밀레니엄 분화물, 1668년과 1903년 분화물이, 그룹 B에는 1702년 분화물이 해당된다. 중금속원소인 Cu, Co, Zn, Mn 등은 소량 함유되어 나타난다. 백두산 화산재는, 섭입대 기원의 일본 사쿠라지마 화산의 화산재와 비교하여, 미량성분원소 중 Y, Nb, Pb, U, Sc, V, Ni 그리고 Cu 함량은 낮게 나타나며, Zr, Ba, Hf, Cr, Co, Zn 그리고 희토류(Eu제외) 등은 높은 함량을 나타낸다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1621-1623
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• 2004

The $Pb(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4})TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using the RF sputtering method with RF powers of 60,70,80,90[W]. All thin films showed the peaks of the tetragonal phase. Increasing the RF power, dielectric constant and loss of the PZT(52/48)/BST(60/40)] heterolayered thin films were decreased. The thickness ratio of PZT and BST thin films was 1/1. The relative dielectric constant and the dielectric loss of the PZT(52/48)/ BST(60/40) heterolayered thin films were 562 and 13%, respectively.