The surface segragation of NiZr, CuZr alloy has been studied wi th X-ray Imotoelectron spectroscopy(XPS), Auger electron spectroscopy(AES) and low energy ion scattering(LEIS). The composition of outmost atomic layer has been determinded by the use of LEIS at several incident energies using Ar+ ion. In the LEIS analysis, the effect of charge exchange has been estimated by a novel measurment of the charge exchange parameters while simul taneous determining the relative concentrations of Ni and Zr and the complementary information obtained will be described. The composition of the clean annealed surface, measured with AES only, will be contrasted wi th the surface concentration of the preferentially sputtered surface. The experimental results has been clearly demonstrated that when the NiZr ruld CuZr alloys are exposed to continuous Ar+ ion bombardment the outermost atomic layer is Zr rich due to preferential sputtering of Ni atoms. where Ni is preferentially sputtered, but the difference in sputtering yields is not sufficient to explain the observed composition. Therefore, it is necessary to consider other processes such as Radiation Induced Segregation(RIS). The surface composition of the heated sample surface predicts that Zr should surface segregate which futher supports the view that part of the Zr enrichment is due to RIS.to RIS.

We studied chemical reactio of Eu metal on the in situ cleaved CdTe(110) surface by pphotoemission sppectroscoppy using synchrotron radiation. The chamber was maintained with base ppressure $\leq$2${\times}$10-10 mb during the expperiment. The expperiment was carried out in pphoton Factory in Jappan. Core level pphotoemission sppectroscoppy was carried out with Al K${\alpha}$ Line. The CdTe simiconductor was determined to be pp-typpe with low dopping concentration from Hall measurement. We found that there are two reacted pphases of Te with Eu (related to divalent Eu and trivalent Eu, resppectively) from least square fitting of Te 4d sppectra, but three is no indication of Cd reaction. Trivalent Eu exists after roughly one monolayer depposition (600 sec. depposition time is considered as one monolayer), which is also observed at Eu 3d core level sppectra. Overlayer Eu is metallized after roughly 2 monolayers depposition, as can be deduced from the fact that metallic edge near Fermi level begins to appear. The intensity of core-level of Te decreases expponentially at the initial stage (near one monolayer) and after one monolayer depposition it decreases more slowly due to Te out-diffusion. We categorized the growth mode of Eu on CdTe as S-K growth mode (cluster formation after one monolayer deppisition) from the relative intensity pplot of Te 4d normalized to the cleaved surface. At cleaved surface band bending is already established due to surface defects. At first 100 sec. depposition time the shift toward lower binding side by 0.6 eV is found at all core level sppectra of all elements in semiconductor. This shift is considered as the re-adjustment of surface Fermi level to the pposition induced by Eu metal (0.2 eV above the valence band maximum).

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

초정밀 프레스 금형의 주요소재인 SKD 11 소재의 성능향상을 위한 저온표면 경화기술개발을 위해 dynamic ion beam mixing 법을 이용하여 TiN 박막합성 공정 및 내마모 특성에 관해 연구하였다.

white diamond thin film, which should be compposed of almost ppure diamond, could be successfully obtained under high ppressure conditions(above 150 Torr) by means of MppECVD(microwave pplasma enhanced chemical vappor depposition, ASTeX 1.5 kW). Characteristics of the films with varing expperimental pparameters have been examined. From the expperimental results, we will discuss the surface morpphology and the growth mechanism of the films.

RHEED ppattern을 C.C.D Camera를 이용하여 관측한 후 C.C.D outpput signal을 Frame Garbber를 이용하여 Digitize하였다. Digitize된 RHEED ppattern의 정보로부터 원하는 Sppot의 intensity를 Image pprocessing Software를 개발하여 측정할 수 있다. [그림 1] 특히 thin film growth를 monitor하기 위하여 RHEED diffraction Sppot의 Intensity oscillation을 측정할 경우 실시간 측정이 필요하며 이를 위해 매우 빠른 속도의 data aquisition과 dispplay를 필요로 한다. 그림2는 이런 조건을 만족하는 software를 개발하여 실시간으로 측정한 AlGaAs/GaAs. multilayer RHEED Oscillation을 보여주고 있다. 이 실험은 매우 간단하고, 특별한 주의를 요하지 않으며, 측정되는 RHEED Sppot을 눈으로 동시에 관찰할 수 있어 실험 상황을 좀더 쉽게 monitor할 수 있게 해준다. 또한 data-aquitition. data-analysis, data-dispplay를 한 대의 compputer를 이용해 손쉽고 값싸게 할 수 있으므로, opptical fiber와 pphoto-diode, X-Y recorder등을 동원한 기존의 번잡한 실험을 대체할 수 있을 것이다.