We present a study of exciton relaxation in GaAs/AIGaAs quantum well structures by using time-resolved photoluminescence techniques.03 observed that light-hole exciton has a longer decay time than heavy-hole exciton, which results from the difference of the exciton population factor. We considered the thermal population time to explain the observed exciton dynamics.

Near-field photocurrent experiments were performed for GaAs/AIGaAs MQWs at room temperature. Heavy hole and light hole related peaks are clearly resolved even under extremely low power of near-field excitation. By scanning laterally 2 $\mu\textrm{m}$${\times}$2 $\mu\textrm{m}$ area on the surface, minority carrier diffusion process in the well region was qualitatively studied.

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))

Vertically aligned carbon nanotubes on nickel coated glass substrates were obtained at low temperatures below 600$\^{C}$ by plasma enhanced hot filament chemical vapor deposition where acetylene gas was used as the carbon source and ammonia gas was used as the dilution gas and catalyst. The diameters of the nanotubes decreased from 96 m to 41 m as NH$_3$/C$_2$H$_2$ ratio increased from 2:1 to 5:1. Total flow rate of input gases with constant NH$_3$/C$_2$H$_2$ ratio did not change the diameter of carbon nanotubes. No growth of the carbon nanotubes was observed with only C$_2$H$_2$ nor N$_2$ instead of NH$_2$. G line and D line in Raman spectra were observed, which implies that there were many structural defects in carbon nanotubes.