The uniform distributed pumping model is used to derive analytic expressions of the pressure profile for the molecular flow regime in linearly tapered or flared(conical or pyramidal) tubes with wall sorption. The concept of transmission conductance for sticky tubes of arbitrary shape is newly introduced to calculate the transmission probability using the pressure profile. The transmission probability obtained analytically for a conical sticky tube is compared with that from the Monte Carlo simulation.

We have calculated the electronic structure of impurity atoms in metal host by using the tight binding model in the recursion method. For a self-consistent calculation, we assumed that the effect of impurity introduction was localized only at the impurity site and its neighbours. We calculated the Madelung term by limiting the contribution to Vm of the charge perturbations to the first shell around the impurity with Evjen technique. The calculated local density of states and charge transfer values have been compared with the experimental values for a single impurity in metal host. We fund that d-reso-nance state came from the repulsive interaction between impurity d-state and host band, and the position of d-resonance state depended on the difference of valence electrons between the host and the impurity. the results also showed that the charge transfer value between an impurity and host metal was comparable to the ionicity difference between them.

The field emission current from a n-type GaN is theoretically calculated as a function of carrier concentration n. Among the carrier-induced effects are considered internal voltage drop and band gap shirnkage. The obtained emission current density j increases slowly with increasing n. It is also found that the internal voltage drop due to field penetration is a crucial factor, while the band gap shrink-age effect is meaningful only in high carrier concentrations.

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

A MeV ion implantation system with an 1.7 MV tandem Van de Graaff accelerator has been in the Korea Institute of Geology Mining and Materials. Almost all ions from hydrogen to uranium with several MeV can be implanted. The implantation system consists of a raster beam scanner with scanning frequency 64${\times}$517 Hz, a target holder capable of holding 5${\times}$5㎤ sample, a target cooler, an electron flooding gun and a Faraday cup with electron suppressor. The energy range of ions are from about 200 keV to 3.4 MeV in the case of hydrogen and about 200 keV to 12MeV for As for instance. The maximum beam current at the target is about 5${\mu}\textrm{A}$ depending on the ion production capability of the ion sources. The implantation nonuniformity is about 6%. the performance of the charge neutralization system is shown.

Metastable pseudomorphic Ge0.06Si0.94 layers grown by molecular-beam-epitaxy on Si(100) were implanted at room temperature with 70 keV BF2+ ions to deses of 3${\times}$1013, 1${\times}$1014, and 2.5${\times}$1014cm-2. The samples were subsequently annealed in a vacuum furnace for 30 min periods at 700, 800, and 900$^{\circ}C$. crystalline degradation of the GeSi samples, observed by MeV 4He channeling spectrometry, is pronounced by increasing the dose even though the samples implanted to a low-dose of 3${\times}$1013cm-2 do not visibly degrade after annealing. For samples implanted to doses higher than 1${\times}$1014cm-2, strain conservation is not achieved after the thermal annealing observed by double crystal x-ray diffractometry, whereas the samples implanted to a low-dose of 3${\times}$1013cm-2 show strain conservation up to an anneal of 800$^{\circ}C$ for 30 min. We conclude that at the doping of 70keV BF2+ ions into metastable pseudomorphic Ge0.06Si0.94 layers the strain relaxation is enhanced by the implantation-induced damage, and that the strain conservation is only limited to a low-dose range of ∼1013cm-2.

The effect of mcirostructure on the electrical properties of yttria stabilized zirconia (YSZ) was analyzed by modeling layer arrangements and mixed phase structure. The YSZ thin films were deposited by RF magnetron sputtering using 30mol% YSZ and 8 mol% YSZ targets with yttrium pellets on porous alumina substrates. The structure, composition and electricla properties of the YSZ films were investigated as functions of sputtering conditons and layer arrangements by XRD, TEM, XPS and acimpedance spectroscopy. The results showed that the triple palyered YSZ films had highermicrohardness, lower compressive stress state and higher ionic conductivity by one order than single and double layered YSZ films. However, sputtered YSZ films have low conductivity compared to YSZ pellets or doctor bladed YSZ thin plates. These results were probably due to the influence of insulating alumina substrates, impractical for most stacking geometries and inductance induced by relatively long platinum, lead wire on YSZ conductivity.

The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.