This paper describes the lightning surge analysis model of extra high voltage GIS using EMTP. Various lightning current parameters were investigated in order to confirm the impact on the lightning surge analysis such as lightning current amplitude, waveform, size of GIS, tower footing resistance and surge arresters. The multi-story tower model and EMTP/TACS model were introduced for the simulation of dynamic arc characteristics. The margin between the maximum overvoltage and BIL of the GIS was about 10 percent and the margin between the maximum overvoltage and BIL of the transformer was 21 percent.

In order to analyze the properties of domestically produced 36,000lb porcelain insulators by change of the alumina addition to raw materials, 36000lb ball socket type suspension insulators that were manufactured in 1989, 1995 and 2001 were removed from transmission lines and an experiment was performed. The results indicated that 8 [wt.%] alumina, which influences the mechanical properties and arc resistance properties in the case of insulators that were manufactured in 1989 was contained, and the relative density and the fracture toughness of insulators appeared by 94.2% and 1.4 [MpaㆍM/sup 1/2/], respectively. However, 12 [wt.%] alumina was contained in the case of insulators that were manufactured in 1995, and the relative density and the fracture toughness of insulators appeared preferably lower by 92% and 1.3 [MpaㆍM/sup 1/2/], respectively. The greatest amount of alumina was contained by 17 [wt.%] in the case of insulators that were manufactured in 2001. It was confirmed that the electrical and mechanical characteristics such as the relative density and the fracture toughness appeared remarkably by 96% and 1.7 [Mpaㆍm/sup 1/2/], respectively.

In this paper, an automated methodology for generating model parameters considering real manufacturing processes is presented with verified results. In addition, the outcomes of applications to the next generation of flash memory devices using the parameters calibrated from the process specification decision are analyzed. The test vehicle is replaced with a well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for a flash memory device. The calibration errors are less than 5% of a full chip operation, which is acceptable to designers. The results of the calibration are then used to predict the I-V curves and the model parameters of various transistors for the design of flash devices.

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

In the Langmuir-Blodgett (LB) technique, a monolayer on the water surface is transferred onto a substrate, which is raised and dipped through the surface. From this, multilayers can be obtained in which constituent molecules are periodically arranged. The LB technique has attracted considerable interest in the fabrication of electrical and electronic devices. Many researchers have investigated the electrical properties of monolayer and multiplayer films. Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends that distinguish dendrimers from conventional star-like polymers and microgels. The azobenzene dendrimer is one of the dendritic macromolecules that include the azo-group exhibiting a photochromic character. Due to the presence of the charge transfer element of the azo-group and its rod-shaped structure, these compounds are expected to have potential interest in electronics and ptoelectronics, especially in nonlinear optics. In the present paper, we give pressure stimulation to organic thin films and detect the induced displacement current.

Recently, lasers have become widely used throughout the medical treatment field. Several types of lasers have been used for the purpose of hair removal since the Alexandrite laser was approved by the FDA (Food & Drug Administration) for clinical epilation. In this study, a long-pulsed Alexandrite laser system for hair removal adopting a multi-discharge method in which three flash lamps are turned on consecutively was designed and fabricated. This laser system shows the technology that makes it possible to create extended pulse by turning on three flash lamps consecutively. With this technique, the pulse width can be varied from 4ms∼10ms. Then using this Alexandrite laser system with the pulse width 10ms and the beam size 7mm, hair removal was performed on the back portion of a human hand and leg. This study shows that treatment by the long-pulsed Alexandrite laser produces hair removal with no relevant side effects.

We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.