Frequency Domain Spectroscopy (FDS) measurements were performed on pressboard samples containing different moisture contents and on insulation system of power transformers. The results were used for evaluating sensitivity of the so-called X - Y model, which is applied for estimating moisture content in transformer insulation using the results of FDS measurements. Based on the observations of this analysis a simplified model, called X model, was introduced in which the presence of spacers in transformer insulation has been neglected. Finally, reliability of the X model was assessed by comparing estimates of moisture contents based on FDS measurements on field installed power transformers with moisture contents obtained from chemical analyses of their oil samples.

The pulsed power system is widely available for use in pulse generator applications. Generally, the pulse generator is required for very short pulse width and high peak value. We have designed and fabricated our own pulsed type power system and through its use, we investigated microbe removal characteristics. This paper introduces a simple pulsed power system for removing various microbes caused by dirty water. This system includes a 2 times power supply circuit, IR2110 operated by using a fixed voltage regulator 7812 and 7805, and the switching MOSFET (Metal Oxide Semiconductor Field Effect Transistor). We can also control this process by using a PIC one chip microprocessor. As a result, we can obtain good removing characteristics of various microbes by adjusting the charging voltage, the pulse repetition rate and the electrical field inducing time.

The Nd： YAG laser is commonly used throughout many fields such as accurate material processing, IC marking, semiconductor annealing, medical operation devices, etc., due to the fact that it has good thermal and mechanical properties and is easy to maintain. In materials processing, it is essential to vary the laser power density for specific materials. The laser power density can be mainly controlled by the current pulse width and pulse repetition rate. It is important to control the laser energy in those fields using a pulsed laser. In this paper we propose the constant-frequency current resonant half-bridge converter and monitoring of capacitor charging voltage. This laser power supply is designed and fabricated to have less switching loss, compact size, isolation with primary and secondary transformers, and detection of capacitor charging voltage. Also, the output stabilization characteristics of this Nd： YAG laser system are investigated. The test results are described as a function of laser output energy and flashlamp arc discharging constant. At the energy storage capacitor charges constant voltage, the laser output power is 2.3％ error range in 600[V].

The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100％ of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

The operating condition of the OLED (organic light-emitting diode) is very sensitive to electrode thickness properties. The electrode thickness is a significant issue in the construction of OLEDs because of its transparency, high conductivity and high efficiency as an injector into organic materials. We carried out a systematic study to optimize the electrode thickness conditions in Indiumtin oxide (ITO), Molybdenum (Mo) and Aluminum (Al). Further, we measured electrode thickness under standard conditions [ITO 1500$\AA$, Mo 2600$\AA$, Al 1500$\AA$]. We also evaluated power consumption. In addition, we analyzed substrate uniformity with IVL measurement results. From these results, it is known that the electrode thickness should be optimized in order to accomplish optimal power efficiency.

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

In order to help understand the growth mechanisms of demetallization due to self healing on a metallized polypropylene film (MPPF), several types of defects affecting the breakdown of capacitor dielectrics were made. The breakdown voltages with dielectric thickness were measured at self healing and the demetallized area was evaluated for all of the self healing events. The shapes and growth processes of the demetallized spots on the dielectrics were investigated. As a result, self healing mainly occurred at pin tips, wrinkle sides, and junctions of the wrinkles, and the breakdown voltages strongly depended on the thickness of the dielectrics. In addition, the demetallized area due to self healing was governed by the breakdown voltage and it has been mainly grown by some factors; the applied voltage; the consequent self healing events taking place at the circumference of the original self healing spots; the conductive paths formed by two or more self healing spots and by the consequent self healing spots.

In electrical impedance tomography (EIT), the internal resistivity distribution of the unknown object is computed using the boundary voltage data induced by different current patterns using various reconstruction algorithms. This paper presents a new image reconstruction algorithm based on the genetic algorithm (GA) via a two-step approach for the solution of the EIT inverse problem, in particular for the reconstruction of "static" images. The computer simulation for the 32 channels synthetic data shows that the spatial resolution of reconstructed images in the proposed scheme is improved compared to that of the modified Newton-Raphson algorithm at the expense of an increased computational burden.rden.