Acknowledgement
본 과제(결과물)는 2024년도 교육부의 재원으로 한국연구재단의 지원을 받아 수행된 지자체-대학 협력 기반 지역혁신 사업의 결과입니다(2021RIS-001).
References
- C. Hu, Proc. IEEE, 81, 682 (1993). doi: https://doi.org/10.1109/5.220900
- A. Acovic, G. La Rosa, and Y. C. Sun, Microelectron. Reliab., 36, 845 (1996). doi: https://doi.org/10.1016/0026-2714(96)00022-4
- J. R. Schwank, M. R. Shaneyfelt, D. M. Fleetwood, J. A. Felix, P. E. Dodd, P. Paillet, and V. Ferlet-Cavrois, IEEE Trans. Nucl. Sci., 55, 1833 (2008). doi: https://doi.org/10.1109/TNS.2008.2001040
- D. H. Wang, S. S. Yoon, J. Y. Ku, D. H. Jung, K. S. Lee, D. Kim, and J. Y. Park, IEEE Trans. Device Mater. Reliab., 23, 297 (2023). doi: https://doi.org/10.1109/tdmr.2023.3275947
- T. R. Oldham and F. B. McLean, IEEE Trans. Nucl. Sci., 50, 483 (2003). doi: https://doi.org/10.1109/TNS.2003.812927
- N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, J. Vac. Sci. Technol., 19, 390 (1981). doi: https://doi.org/10.1116/1.571070
- J. Y. Park, D. I. Moon, H. Bae, Y. T. Roh, M. L. Seol, B. H. Lee, C. H. Jeon, H. C. Lee, and Y. K. Choi, IEEE Electron Device Lett., 37, 843 (2016). doi: https://doi.org/10.1109/LED.2016.2574341
- Ph. Avouris, R. E. Walkup, A. R. Rossi, T. C. Shen, G. C. Abeln, J. R. Tucker, and J. W. Lyding, Chem. Phys. Lett., 257, 148 (1996). doi: https://doi.org/10.1016/0009-2614(96)00518-0
- E. Cartier, J. H. Stathis, and D. A. Buchanan, Appl. Phys. Lett., 63, 1510 (1993). doi: https://doi.org/10.1063/1.110758
- R. H. Maurer, M. E. Fraeman, M. N. Martin, and D. R. Roth, Johns Hopkins APL Tech. Dig., 28, 17 (2008).
- W. J. Snoeys, T.A.P. Gutierrez, and G. Anelli, IEEE Trans. Nucl. Sci., 49, 1829 (2002). doi: https://doi.org/10.1109/TNS.2002.801534
- M. Bucher, A. Nikolaou, A. Papadopoulou, N. Makris, L. Chevas, G. Borghello, H. D. Koch, and F. Faccio, Proc. 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) (IEEE, Austin, USA, 2018) p. 166. doi: https://doi.org/10.1109/ICMTS.2018.8383790
- G. P. Platcheck, G. S. Cardoso, and T. R. Balen, IEEE Trans. Aerosp. Electron. Syst., 59, 2072 (2022). doi: https://doi.org/10.1109/TAES.2022.3210079
- T. H. Kil, J. H. Kim, J. Y. Ku, D. H. Wang, D. H. Jung, M. H. Kang, and J. Y. Park, IEEE Trans. Electron Devices, 71, 1078 (2024). doi: https://doi.org/10.1109/TED.2023.3344090
- Y. Liu, W. J. Wu, Y. F. En, L. Wang, Z. F. Lei, and X. H. Wang, IEEE Electron Device Lett., 35, 369 (2014). doi: https://doi.org/10.1109/LED.2014.2301801
- A. J. Lelis, T. R. Oldham, H. E. Boesch, and F. B. McLean, IEEE Trans. Nucl. Sci., 36, 1808 (1989). doi: https://doi.org/10.1109/23.45373
- P. J. McWhorter, S. L. Miller, and W. M. Miller, IEEE Trans. Nucl. Sci., 37, 1682 (1990). doi: https://doi.org/10.1109/23.101177
- J. Y. Park, D. I. Moon, G. B. Lee, and Y. K. Choi, IEEE Trans. Electron Devices, 67, 777 (2020). doi: https://doi.org/10.1109/TED.2020.2964846
- H. G. Lee, S. Y. Oh, and G. Fuller, IEEE Trans. Electron Devices, 29, 346 (1982). doi: https://doi.org/10.1109/T-ED.1982.20707
- Y. Qiu, R. Wang, Q. Huang, and R. Huang, IEEE Trans. Electron Devices, 61, 1284 (2014). doi: https://doi.org/10.1109/TED.2014.2312330
- S. Amor, N. Andre, V. Kilchytska, F. Tounsi, B. Mezghani, P. Gerard, Z. Ali, F. Udrea, D. Flandre, and L. A. Francis, Nanotechnology, 28, 184001 (2017). doi: https://doi.org/10.1088/1361-6528/aa66a4