전기전자학회논문지 (Journal of IKEEE)

  • 제28권2호
  • /
  • Pages.239-242
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  • 2024
  • /
  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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저전압급 ESD 보호를 위한 LRSCR 기반 Self-bias SCR에 관한 연구

A Study on Self-bias SCR Based on LRSCR for Low Voltage Class ESD Protection

  • U-Yeol Seo (Dept. of Electronics Engineering, Dankook University) ;
  • Sang-wook Kwon (Dept. of Electronics Engineering, Dankook University) ;
  • Jae-yoon Oh (Dept. of Electronics Engineering, Dankook University) ;
  • Yong-Seo Koo (Dept. of Electronics Engineering, Dankook University)
  • 투고 : 2024.06.10
  • 심사 : 2024.06.24
  • 발행 : 2024.06.30
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초록

본 논문에서는 기존의 ESD 보호소자보다 Self-bias를 통하여 전류구동 능력을 향상시킨 ESD 보호소자를 제안하였다. 새로운 제안 구조는 LRSCR구조 기반이며 N+ 확산 영역을 추가하였으며 게이트와 P+ 확산영역을 연결하여 저항을 감소시킨다. 그 결과, 제안된 ESD 보호소자는 11.8V의 트리거 전압과 5.9V의 홀딩 전압을 나타내는 것으로 확인되었다. 저전압용 5V 애플리케이션에 사용될 수 있으며 우수한 전류구동능력을 가지고있을 것으로 기대된다.

This paper proposed an ESD protection device that improved the current driving ability through Self-bias than the existing ESD protection device. The new proposed structure is based on the LRSCR structure and adds an N+ diffusion region, and reduces resistance by connecting the gate and the P+ diffusion region. As a result, it was confirmed that the proposed ESD protection device exhibits a trigger voltage of 11.8V and a holding voltage of 5.9V. It can be used in 5V applications for low voltage and is expected to have excellent current driving capability.

키워드

과제정보

This paper was supported by Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Korea Government(MOTIE)(RS-2024-00403586, Development of Reinforced Insulated High Reliability Integrated Power IC Technology including Digital Precision Control) and conducted with the support of the Compound Material-based Next Generation Power Semiconductor Technology Development Project of the Ministry of Trade, Industry and Energy and the Korea Institute for Industrial Technology Evaluation (RS-2022-00143842, "Single/Three-phase AC/DC Converter Smart Power IC using SiC MOSFET devices")

참고문헌

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