융합정보논문지 (Journal of Convergence for Information Technology)

중소기업융합학회 (Convergence Society for SMB)
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페로브스카이트 반도체 물질에 원형 패턴을 형성하기 위한 상압플라즈마 식각 기술

Atmospheric Pressure Plasma Etching Technology for Forming Circular Holes in Perovskite Semiconductor Materials

  • 김무진 (강남대학교 IoT전자공학과)
  • Kim, Moojin (Department of IoT Electronic Engineering, Kangnam University)
  • 투고 : 2021.01.11
  • 심사 : 2021.02.20
  • 발행 : 2021.02.28
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초록

본 논문에서는 먼저 습식 코팅 방법으로 페로브스카이트 (CH3NH3PbI3) 박막을 글라스 상에 형성하고, 다양한 분석 기법을 이용하여 막의 두께, 표면거칠기, 결정성, 구성성분 및 가시광 영역에서의 이 물질의 반응에 대해 논한다. 완성된 반도체 물질은 막내부에 결함(defect)이 없고 균일하며, 표면거칠기는 매우 작으며, 가시광영역에서 높은 흡수율이 관찰되었다. 다음으로 이와 같이 형성된 유무기 층에 hole 형상을 구현하기 위하여, 구멍이 일정한 간격으로 있는 메탈마스크, 페로브스카이트 물질이 코팅되어 있는 유리, 자석 순서로 되어있는 구조의 샘플을 상압플라즈마 공법을 이용하여 시간에 따른 물질에 형성되는 hole 형태의 변화를 분석하였다. 시간이 길어짐에 따라 더 많이 식각되는 것을 알 수 있으며, 이 중에서 공정 시간을 가장 오래한 샘플에 대해서는 보다 자세하게 살펴보았고, 플라즈마의 위치에 따른 차이에 의해 7영역으로 분류할 수 있었다.

In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.

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참고문헌

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