Abstract
The demand for stable plasma has been on the rise because of the increased delivery power amount in the chamber for improving productivity, and fast and accurate plasma impedance matching become a crucial performance measure for radio frequency (RF) power system in semiconductor manufacturing equipment. In this paper, the overall impedance matching was understood, and voltage and current values were extracted with voltage - current (VI) probe to measure plasma impedance in real-time. Actual matching data were analyzed to derive calibration coefficient for V and I measurements to understand the characteristics of VI probe, and we demonstrated the tendency of RF impedance matching according to changes in load impedance. This preliminary empirical research can contribute to fast RF matching as well as advanced equipment control for the next level of detailed investigation on embedded system based-RF matching controller.