스퍼터링 방법으로 증착한 SiO2와 V2O5박막의 전류특성과 계면분석

Interface Characteristics and Electrical Properties of SiO2 and V2O5 Thin Films Deposited by the Sputtering

  • Li, Xiangjiang (Division of Semiconductor, Choenju University) ;
  • Oh, Teresa (Division of Semiconductor, Choenju University)
  • 투고 : 2018.12.10
  • 심사 : 2018.12.18
  • 발행 : 2018.12.31

초록

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

키워드

참고문헌

  1. Xiongwen Zhang "Thermal Analysis of a Cylindrical Lithi-um-ion Battery," Journal of Electrochemical Acta, 56, pp. 1246-1255, 2011. https://doi.org/10.1016/j.electacta.2010.10.054
  2. Yuta Miura, Takashi Nishida, Masahiro Echizen, Yasuaki Ishikawa, Kiyoshi Uchiyama, and Yukiharu Uraoka, "Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-k $SrTa_2O_6Li$ Lu1," Japanese Journal of Applied Physics, Vol. 51, pp. 03CB05, 2012. https://doi.org/10.7567/JJAP.51.03CB05
  3. Tae Eun Park, Dong Chan Kim, Bo Hyun Kong and Hyung Koun Cho, "Structural and potical properties of ZnO thin films grown by RF magnetron sputtering on Si substrates," Journal of the Korean Physical Society, Vol. 45, pp. S697-S700, 2004.
  4. Teresa. Oh, "Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, $SnO_2$ and ZTO," Korean Journal of Materials Research, Vol. 25, No. 7, pp. 347-351, 2015. https://doi.org/10.3740/MRSK.2015.25.7.347
  5. Teresa. Oh, "Tunneling Condition at High Schottky Barrier and Ambipolar Transfer Characteristics in Zinc Oxide Semiconductor Thin Film Transistor," MRB, Vol. 77, pp. 1-7, 2016.
  6. Kyonghwan Oh and Oh-Kyong Kwon, "Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays," Japanese Journal of Applied Physics, Vol. 51, pp. 03CD01, 2012. https://doi.org/10.7567/JJAP.51.03CD01
  7. T. Oh and C. H. Kim "Study on Characteristic Properties of Annealed SiOC Film Prepared by Inductively Coupled Plasma Chemical Vapor Deposition," IEEE Trans. Plasma Science, Vol. 38, pp. 1598-1602, 2010. https://doi.org/10.1109/TPS.2010.2049665
  8. John Robertson, Robert M. Wallace, "High-K materials and metal gates for CMOS applications," Materials Science and Engineering R, Vol. 88, pp. 1-41. 2015. https://doi.org/10.1016/j.mser.2014.11.001
  9. Narendra Kumar, Satyendra Kumar, Jitendra Kumar and Siddhartha Pandaa, "Investigation of Mechanisms Involved in the Enhanced Label Free Detection of Prostate Cancer Biomarkers Using Field Effect Devices," Journal of The Electrochemical Society, Vol. 164, No. 9, pp. B409-B416, 2017. https://doi.org/10.1149/2.0541709jes
  10. T. Oh and C. K. CHoi "Comparison between SiOC thin film fabricated by using plasma enhance chemical vapor deposition and SiO2 thin film by using fourier transform infrared spectroscopy," Journal of the Korean Physical Society, Vol. 56, pp. 1150-1155, 2010. https://doi.org/10.3938/jkps.56.1150
  11. Young Seok Lee, Jang Jae Lee, Si Jun Kim and Shin Jae You, "Research on the relative comtribution of two electron groups of Ar plasma with non-thermal equilibrium electron distribution," Journal of the Semiconductor & Display Technology, Vol. 17, No. 11, pp. 76-83, 2018.