• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.17-20
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• 2018

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

• Journal of Environmental Science International
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• v.12 no.4
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• pp.367-373
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• 2003

The focus of this study was to identify and describe environmental preconceptions held by pre-service elementary teachers about three issues : greenhouse effect, ozone layer depletion and acid rain. Two hundred and twenty nine pre-service elementary teachers participated in this study. A 36 question survey was created by one of the authors. The questions focused on the cause, effects, and interactions of three environmental issues greenhouse effect of one layer depletion and acid rain. Pre-service elementary teachers answered the questions on a Likert scale. An analysis of the survey data indicated that the majority of pre-service elementary teachers possess an array of incorrect conceptions about the causes and effects of the greenhouse effect ozone layer depletion, and acid rain. and also many pre-service elementary teachers thought that there were causal relationships among the increase in greenhouse effect, the destruction of ozone layer, and the increase of acid rain.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.29-31
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• 2019

The ZTO/p-Si thin film was produced and investigated for tunneling phenomena caused by the interface characteristics of the depletion layer. ZTO thin film was deposited and heat treated to produce barrier potentials by the depletion layer. The negative resistance characteristics were shown in the thin film of ZTO heat treated at $100^{\circ}C$, and the insulation properties were the best. Current decreased in the negative voltage direction by nonlinear show key characteristics, and current decreased in tunneling phenomenon by negative resistance in the positive voltage direction. Heat treated at $100^{\circ}C$, the ZTO thin film has increased barrier potential in the areas of the depletion layer and therefore the current has increased rapidly. The current has decreased again as we go beyond the depletion layer. Therefore, tunneling can be seen to make insulation better. In the ZTO thin film heat treated at $70^{\circ}C$ without tunneling, leakage current occurred as current increased at positive voltage. Therefore, tunneling effects by negative resistance were found to enhance insulation properties electrically.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.74-79
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• 2018

In this report, the results of a systematic study on the effects of polycrystalline silicon gate depletion on the reliability characteristics of metal-oxide semiconductor field-effect transistor (MOSFET) devices were discussed. The devices were fabricated using standard complimentary metal-oxide semiconductor (CMOS) processes, wherein phosphorus ion implantation with implant doses varying from $10^{13}$ to $5{\times}10^{15}cm^{-2}$ was performed to dope the polycrystalline silicon gate layer. For implant doses of $10^{14}/cm^2$ or less, the threshold voltage was increased with the formation of a depletion layer in the polycrystalline silicon gate layer. The gate-depletion effect was more pronounced for shorter channel lengths, like the narrow-width effect, which indicated that the gate-depletion effect could be used to solve the short-channel effect. In addition, the hot-carrier effects were significantly reduced for implant doses of $10^{14}/cm^2$ or less, which was attributed to the decreased gate current under the gate-depletion effects.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.408-411
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• 2019

ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at $150^{\circ}C$. The capacitance decreases at $200^{\circ}C$ ZTO heat treated at $150^{\circ}C$ shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.36 no.5
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• pp.769-777
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• 2016

The objective of this study was to evaluate the stream depletion from groundwater pumping in deep aquifer using the Ward and Lough's analytical solution (2011) which considers a two-layer leaky aquifer system. The calculated results for each pumping from the 110 wells beside streams showed a wide range of non-dimensional stream depletion, that is the streamflow depletion rate divided by the groundwater pumping rate, from lower than 0.1 to more than 0.9 on average for 5 years depending on the specific properties of well location. From the comparison with Hunt's solution (1999) of a single layer aquifer, the Ward and Lough's solution showed about 50% lower than the Hunt's solution due to the difference of hydraulic properties between the first and second layers as well as the lagged effect of vertical leakance. It was also found that the groundwater pumping has a minor effect on the stream depletion if the stream depletion factor (SDF) of the 1st layer is higher than about 1,000 or the SDF of the 2nd layer is higher than about 100, or the vertical leakance is smaller than $10^{-5}s^{-1}$. Furthermore, in the present study, the variations of the stream depletion were assessed according to the magnitude of unmeasured hydraulic properties such as transmissivity and storage coefficient of the 1st layer, vertical hydraulic conductivity of the 2nd layer, the streambed hydraulic conductance.

• Journal of Korea Water Resources Association
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• v.49 no.11
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• pp.923-930
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• 2016

This study was to evaluate the stream depletion from groundwater pumping in shallow aquifer using the Hunt's analytical solution (2009) which considers a two-layer leaky aquifer-stream system. From the total 2,187 cases of simulations with combinations of various aquifer and stream properties, the streamflow depletion rates divided by the groundwater pumping rate showed the low values when the stream depletion factor (SDF) is higher than 1,000-10,000, and was more sensitive to the aquitard hydraulic conductivity than the streambed hydraulic conductivity. The comparison of the Hunt's solution (2009) with the Hunt's solution (1999) of a single layer aquifer indicated that the maximum difference between the dimensionless stream depletions calculated by using both solutions is above 0.3, and the stream depletion is significantly affected by the hydraulic properties of the $2^{nd}$ layer as the SDF of the first layer increases. The Hunt's solution (2009) was applied to the real shallow groundwater well that is located in Chunju-Si, and the results revealed that the groundwater pumping has significant effects on streamflow in a short period of time, showing that the dimensionless stream depletion exceeds 0.8 within a few days. It was also found that the shallow groundwater pumping effects on stream depletion are highly dependent on the stream-well distance for the locations with high hydraulic diffusivity of $1^{st}$ layer and low vertical leakance between $1^{st}$ and $2^{nd}$ layers.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.342-346
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• 2016

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.