ETRI Journal

  • 제39권2호
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  • Pages.284-291
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  • 2017
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Impact of Energy Relaxation of Channel Electrons on Drain-Induced Barrier Lowering in Nano-Scale Si-Based MOSFETs

  • Mao, Ling-Feng (School of Computer & Communication Engineering, University of Science & Technology Beijing)
  • 투고 : 2016.10.19
  • 심사 : 2017.02.02
  • 발행 : 2017.04.01
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초록

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

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참고문헌

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피인용 문헌

  1. Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors vol.93, pp.1, 2017, https://doi.org/10.1007/s12043-019-1769-4