Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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MoS2-Embedded Schottky Photoelectric Devices

MoS2 기반의 쇼트키 반도체 광전소자

  • Ban, Dong-Kyun (Department of Electrical Engineering, Incheon National University) ;
  • Park, Wang-Hee (Department of Electrical Engineering, Incheon National University) ;
  • Jong, Bok-Mahn (Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • Received : 2017.04.06
  • Accepted : 2017.04.25
  • Published : 2017.07.01
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Abstract

A high-performing photoelectric device was realized for the $MoS_2$-embedded Si device. $MoS_2$-coating was performed by an available large-scale sputtering method. The $MoS_2$-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of the $MoS_2$-layer provides over 80% transmittance for broad wavelengths. The $MoS_2$-embedded Si photodetector shows the sensitive photo-response for middle and long-wavelength photons due to the functional $MoS_2$-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of $MoS_2$-layer would provide a promising route for enhanced photoelectric devices, including photovoltaic cells and photodetectors.

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References

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