한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권7호
  • /
  • Pages.413-416
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  • 2017
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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PMMA 보호막을 이용한 용액 공정 기반의 인듐-이티륨-산화물 트랜지스터에 관한 연구

Study on Solution Processed Indium-Yttrium-Oxide Thin-Film Transistors Using Poly (Methyl Methacrylate) Passivation Layer

  • 김한상 (충북대학교 전자정보대학) ;
  • 김성진 (충북대학교 전자정보대학)
  • Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • 투고 : 2017.02.22
  • 심사 : 2017.04.23
  • 발행 : 2017.07.01
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초록

We investigated solution-processed indium-yttrium-oxide (IYO) TFTs using apoly (methyl methacrylate) (PMMA) passivation layer. The IYO semiconductor solution was prepared with 0.1 M indium nitrate hydrate and 0.1 M yttrium acetate dehydrate as precursor solutions. The solution-processed IYO TFTs showed good performance: field-effect mobility of $13.13cm^2/Vs$, a threshold voltage of 8.2 V, a subthreshold slope of 0.93 V/dec, and a current on-to-off ratio of $7.2{\times}10^6$. Moreover, the PMMA passivation layers used to protectthe IYO active layer of the TFTs, did so without deteriorating their performance under ambient conditions; their operational stability and electrical properties also improved by decreasing leakage current.

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참고문헌

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