• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.413-416
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• 2017

We investigated solution-processed indium-yttrium-oxide (IYO) TFTs using apoly (methyl methacrylate) (PMMA) passivation layer. The IYO semiconductor solution was prepared with 0.1 M indium nitrate hydrate and 0.1 M yttrium acetate dehydrate as precursor solutions. The solution-processed IYO TFTs showed good performance: field-effect mobility of $13.13cm^2/Vs$, a threshold voltage of 8.2 V, a subthreshold slope of 0.93 V/dec, and a current on-to-off ratio of $7.2{\times}10^6$. Moreover, the PMMA passivation layers used to protectthe IYO active layer of the TFTs, did so without deteriorating their performance under ambient conditions; their operational stability and electrical properties also improved by decreasing leakage current.