Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Dynamic Self-Heating Effects of Bulk and SOI FinFET with Realistic Device Structure

실제적 구조를 가진 벌크 및 SOI FinFET에서 발생하는 동적 self-heating 효과

  • Ryu, Heesang (Department of Electronics and Information Engineering, Korea University) ;
  • Chung, Hayun Cecillia (Department of Electronics and Information Engineering, Korea University) ;
  • Yang, Ji-Woon (Department of Electronics and Information Engineering, Korea University)
  • 유희상 (고려대학교 과학기술대학 전자 및 정보공학과) ;
  • 정하연 (고려대학교 과학기술대학 전자 및 정보공학과) ;
  • 양지운 (고려대학교 과학기술대학 전자 및 정보공학과)
  • Received : 2015.03.20
  • Accepted : 2015.10.02
  • Published : 2015.10.25
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Abstract

Self-heating effects of bulk and SOI FinFETs on device structure are examined with TCAD simulation. The degradation of drive current in SOI FinFET is severer than that of bulk one in steady-state condition as expected. However, it is shown that the dynamic self-heating effects of SOI FinFETs are comparable to those of bulk FinFETs for high speed logic operation, especially in realistic device structure.

본 연구에서는 실제적 구조를 가지는 bulk와 SOI FinFET에서의 self-heating 효과를 3차원 TCAD 전산모사를 통하여 분석하였다. 기존 연구들에서와 마찬가지로 self-heating 효과에 의해 나타나는 정적인 구동전류의 감소는 SOI FinFET에서 bulk FinFET보다 더 심각함을 보여주고 있다.. 그러나 고속의 logic 동작 및 실제적 구조를 감안하면 SOI FinFET에서의 동적 self-heating 효과는 bulk FinFET과 큰 차이가 없음을 강조한다.

Keywords

References

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