Current Photovoltaic Research

  • 제3권3호
  • /
  • Pages.80-84
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  • 2015
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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고상 성장법을 이용한 실리콘 태양전지 에미터 형성 연구

A Study on Solid-Phase Epitaxy Emitter in Silicon Solar Cells

  • 김현호 (고려대학교 신소재공학과) ;
  • 지광선 (LG전자 기술원) ;
  • 배수현 (고려대학교 신소재공학과) ;
  • 이경동 (고려대학교 신소재공학과) ;
  • 김성탁 (고려대학교 신소재공학과) ;
  • 박효민 (고려대학교 신소재공학과) ;
  • 이헌민 (LG전자 기술원) ;
  • 강윤묵 (고려대학교 그린스쿨대학원 에너지환경정책기술학과) ;
  • 이해석 (고려대학교 신소재공학과) ;
  • 김동환 (고려대학교 신소재공학과)
  • Kim, Hyunho (Department of Materials Science and Engineering, Korea University) ;
  • Ji, Kwang-Sun (Solar Energy Team, Materials and Components R&D Laboratory, LG Electronics) ;
  • Bae, Soohyun (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Kyung Dong (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Seongtak (Department of Materials Science and Engineering, Korea University) ;
  • Park, Hyomin (Department of Materials Science and Engineering, Korea University) ;
  • Lee, Heon-Min (Solar Energy Team, Materials and Components R&D Laboratory, LG Electronics) ;
  • Kang, Yoonmook (KU.KIST Green School, Graduate School of Energy-Environment Policy and Technology, Korea University) ;
  • Lee, Hae-Seok (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
  • 투고 : 2015.08.18
  • 심사 : 2015.08.24
  • 발행 : 2015.09.30
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초록

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

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