JSTS:Journal of Semiconductor Technology and Science

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Forming Gas Post Metallization Annealing of Recessed AlGaN/GaN-on-Si MOSHFET

  • Lee, Jung-Yeon (School of Electrical and Electronic Engineering, Hongik University) ;
  • Park, Bong-Ryeol (School of Electrical and Electronic Engineering, Hongik University) ;
  • Lee, Jae-Gil (School of Electrical and Electronic Engineering, Hongik University) ;
  • Lim, Jongtae (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
  • Received : 2014.08.23
  • Accepted : 2014.10.24
  • Published : 2015.02.28
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Abstract

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

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References

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