Transactions on Electrical and Electronic Materials

  • 제15권4호
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  • Pages.221-225
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Surface Analysis of Aluminum Bonding Pads in Flash Memory Multichip Packaging

  • Son, Dong Ju (Department of Electronic Engineering, Myongji University) ;
  • Hong, Sang Jeen (Department of Electronic Engineering, Myongji University)
  • 투고 : 2013.12.11
  • 심사 : 2014.06.02
  • 발행 : 2014.08.25
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초록

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

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참고문헌

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피인용 문헌

  1. Crystalline defect formation on aluminum bond pads during CMOS wafer storage and process strategies for defect elimination vol.36, pp.3, 2018, https://doi.org/10.1116/1.5027149