Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical Characteristics of Super Junction MOSFET According to Trench Etch Angle of P-pillar

P-pillar 식각 각도에 따른 Super Junction MOSFET의 전기적 특성 분석에 관한 연구

  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • Received : 2014.07.17
  • Accepted : 2014.07.24
  • Published : 2014.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench angle which is the most important characteristics of SJ MOSFET and core process. Because research target is 600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdown voltage 750 V with 30% margin rate. we found that on resistance is $22mohm{\cdot}cm^2$ and threshold voltage is 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

Keywords

References

  1. E. G. Kang and M. Y. Sung, J. KIEEME, 15, 758 (2002).
  2. T. J. Nam, H. S. Chung, and E. G. Kang, J. KIEEME, 24, 713 (2011).
  3. M. A. Paul and D. J. Bates, Electronic Principles (McGraw-Hill College, 2006)
  4. E. Gates and L. Chartrand, Introduction to Electronics, 4ed. (Delmar, 2001)
  5. S. S. Kyoung, J. H. Seo, Y. H. Kim, J. S. Lee, E. G. Kang, and M. Y. Sung, J. KIEEME, 22, 12 (2009).
  6. H. S. Lee, E. G. Kang, A. R. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).
  7. W. H. Hayt, Jr. Eng. Ineer. Ingelect. Romagnetics-7/E (McGraw-Hill, 2005)