Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Anisotropy of the Hall Factor According to the Growth Direction in the Two-dimensional Device with Indirect Conduction Valley

간접천이대를 갖는 2차원 소자에서 성장방향에 따른 Hall 인수의 이방성 연구

  • Kim, Jong Gu (Department of Electronic Engineering, Inha University) ;
  • Lee, Jae Chul (Department of Electronic Engineering, Inha University) ;
  • Chun, Sang Kook (Department of Electronic Engineering, Inha University)
  • Received : 2014.04.14
  • Accepted : 2014.06.10
  • Published : 2014.07.01
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Abstract

The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.

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References

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