• Title/Summary/Keyword: Indirect conduction valley

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Anisotropy of the Hall Factor According to the Growth Direction in the Two-dimensional Device with Indirect Conduction Valley (간접천이대를 갖는 2차원 소자에서 성장방향에 따른 Hall 인수의 이방성 연구)

  • Kim, Jong Gu;Lee, Jae Chul;Chun, Sang Kook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.7
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    • pp.428-432
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    • 2014
  • The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.

Hall Factor in the Quantum Well Structure with Indirect Conduction Minima (간접천이대를 갖는 양자우물 구조에서의 Hall 상수)

  • Lee, Jae Chul;Chun, Sang Kook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.6
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    • pp.421-424
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    • 2013
  • The Hall factor in a quantum well structure with X or L-type indirect conduction valleys is calculated for various strain conditions. The two-dimensional constant energy surfaces of occupied valleys are proven to be identical. As a result, the Hall factor depends on the relative direction of occupied valleys to the growth direction, regardless of the number of occupied valleys. This work is widely applicable to the two-dimensional structure with indirect conduction minima for any growth direction and under different strain conditions.

Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

  • Joung, Hodoug;Ahn, Il-Ho;Yang, Woochul;Kim, Deuk Young
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.774-783
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    • 2018
  • Full maximum-entropy mobility-spectrum analysis (FMEMSA) is the best algorithm among mobility spectrum analyses by which we can obtain a set of partial-conductivities associated with mobility values (mobility spectrum) by analyzing magnetic-field-dependent conductivity-tensors. However, it is restricted to a direct band-gap semiconductor and should be modified for materials with other band structures. We developed the modified version of FMEMSA which is appropriate for a material with a single anisotropic valley, or an indirect-band-gap semiconductor quantum-well with a single non-degenerate conduction-band valley e.g., (110)-oriented AlAs quantum wells with a single anisotropic valley. To demonstrate the reliability of the modified version, we applied it to several sets of synthetic measurement datasets. The results demonstrated that, unlike existing FMEMSA, the modified version could produce accurate mobility spectra of materials with a single anisotropic valley.