The Transactions of the Korean Institute of Electrical Engineers P (전기학회논문지P)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Electric and Ferroelectric of Pb(Zr0.52Ti0.48)O3 Thin Films Deposited on Ruthenium Electrodes

루테늄 전극위에 증착된 PZT 박막의 전기적 및 강유전 특성

  • Received : 2013.11.05
  • Accepted : 2013.11.29
  • Published : 2014.03.01
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Abstract

$Pb(Zr_{0.52}Ti_{0.48})O_3(PZT)$ thin films deposited on $Ru/RuO_2$ bottom electrode that grown for in-situ progress used rf magnetron sputtering method. We investigated the dependence of the crystalline and electrical properties in the way of capacitors PZT thin films. Our results show that all PZT films indicated polycrystalline perovskite structure with preferred orientation (110) and no pyrochlore phase is observed. The electric properties of the Ru improved with increasing Ru thin films thickness. A well-fabricated Ru/PZT/Ru (100 nm) /$RuO_2$ capacitor showed a leakage current density in the order of $2.03{\times}10^{-7}$ $A/cm^2$ as a 50 kV/cm, a remnant polarization (Pr) of 9.22 ${\mu}C/cm^2$, and a coercive field (-EC) of -32.22 kV/cm. The results show that $Ru/Ru/RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.

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References

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