참고문헌
- X. Weng, S. Raghavan, J.D. Acord, A. Jain, E.C. Dickey and J.M. Redwing, "Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates", J. Crystal Growth 300 (2007) 822.
- D.K. Kim and C.B. Park, "Growth of crack-free GaN films on Si(111) substrates with AlN buffer layers", J. Kor. Phys. Soc. 49 (2006) 1497.
- A. Dadgar, P. Veit, F. Schulze, J. Blasing, A. Krtschil, H. Witte, A. Diez, T. Hempel, J. Christen, R. Clos and A. Krost, "MOVPE growth of GaN on Si - substrates and strain", Thin Solid Films 515 (2007) 4356. https://doi.org/10.1016/j.tsf.2006.07.100
- Z. Liu, X. Wang, J. Wang, G. Hu, L. Guo, J. Li, J. Li and Y. Zeng, "Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD", J. Crystal Growth 298 (2007) 281. https://doi.org/10.1016/j.jcrysgro.2006.10.028
- V.N. Bessolov, V. Yu. Davydov, Yu. V. Zhilyaev, E.V. Konenkova, G.N. Mosina, S.D. Raevskii, S.N. Rodin, Sh. Sharofidinov, M.P. Shcheglov, H.S. Park and M. Koike, "GaN films grown by vapor-phase epitaxy in a hydride chloride system on Si(111) substrates with AlN buffer sublayers", Techn. Phys. 31(11) (2005) 915. https://doi.org/10.1134/1.2136951
- J.X. Zhang, Y. Qu, Y.Z. Chen, A. Uddin, P. Chen and S.J. Chua, "Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition", Thin Solid Films 515 (2007) 4397. https://doi.org/10.1016/j.tsf.2006.07.111
- Y. Dikme, G. Gerstenbrandt, A. Alam, H. Kalisch, A. Szymakowski, M. Fieger, R.H. Jansen and M. Heuken, "Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)", J. Crystal Growth 248 (2003) 578. https://doi.org/10.1016/S0022-0248(02)01922-X
- C.K. Shu, J. Ou, H.C. Lin, W.K. Chen and M.C. Lee, "Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition", Appl. Phys. Lett. 73 (1998) 641. https://doi.org/10.1063/1.121933
- K.Y. Zang, S.J. Chua, L.S. Wang, C.V. Thompson, "Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films", Phys. Status Solidi C7 (2003) 2067.
- A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki, "The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer", J. Crystal Growth 128 (1993) 391. https://doi.org/10.1016/0022-0248(93)90354-Y
- J.H. Choi, Z. Andrei, S.I. Kim, C.W. Baik, M.H. Yang, S.S. Park, H. Suh, U.J. Kim, S.H. Bin, J.S. Lee, M. Kim, J.M. Kim and K. Kim, "Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates", Nature Photonics 5 (2011) 763. https://doi.org/10.1038/nphoton.2011.253
- H. Xu, X. Hu, X. Xu, Y. Shen, S. Qu, C. Wang and S. Li, "Gallium vacancies related yellow luminescence in N-face GaN epitaxial film", Applied Surface Science 258 (2012) 6451. https://doi.org/10.1016/j.apsusc.2012.03.059