• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.206-209
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• 1989

It has been that, above $600^{\circ}C$, a cover crystal is essential for protecting InP substrate from severe gas etching during soaking procedure and shown that the melt back rate of substrate crystal in In solvent is about 0.90${\mu}{\textrm}{m}$/sec at 635$^{\circ}C$, 0.57${\mu}{\textrm}{m}$/sec at 615$^{\circ}C$ and 0.37${\mu}{\textrm}{m}$/sec at 595$^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.780-788
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• 1986

1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.215-222
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• 1995

Nb doped strontium titanate single crystals were grown by the floating zone method. The doping amount of $Nb_2O_5$ was 0.2 wt %. Those crystals were grown in air and N z atmosphere and the growth rate was 5 mmlhr and rotation speed of upper and lower shaft was 30 rpm. The shapes of melt - feed rod interface depending on sintering temperatures were observed. In air atmosphere, the flow rate of air was 1.5 ${\ell}/min$ and in $N_2$ atmosphere, that of $N_2$ gas was 0.5 ${\ell}/min$. As grown crystals were analyseQ by XRD, Laue back - reflection and chemical etching. After annealing in $N_2$ atmosphere, resistivities of crystals were measured and the activation energies of each samples were calculated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.161-166
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• 2013

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.