Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effect of V/III Ratio on Growth Mechanism of Gas Source MBE

가스소스 MBE에서 원료공급량이 결정성장 기구에 미치는 영향

  • Choi, Sungkuk (Department of Applied Physics, Korea Maritime University) ;
  • Yoo, Jinyeop (Department of Applied Physics, Korea Maritime University) ;
  • Jung, Soohoon (Department of Applied Physics, Korea Maritime University) ;
  • Chang, Wonbeom (Department of Applied Physics, Korea Maritime University) ;
  • Chang, Jiho (Department of Applied Physics, Korea Maritime University)
  • 최성국 (한국해양대학교 응용과학과) ;
  • 유진엽 (한국해양대학교 응용과학과) ;
  • 정수훈 (한국해양대학교 응용과학과) ;
  • 장원범 (한국해양대학교 응용과학과) ;
  • 장지호 (한국해양대학교 응용과학과)
  • Received : 2012.07.12
  • Accepted : 2013.05.23
  • Published : 2013.06.01
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Abstract

Growth mechanism of GS-MBE(Gas source-Molecular Beam Epitaxy) has been investigated. We observed that the growth rate of GaN films is changing from 520 nm/h to 440 nm/h by the variation of V/III ratio under nitrogen-rich growth condition. It was explained that the amount of hydrogen on the growth front varies by the ammonia flow, and gallium hydrides are generated on the surface by a reaction of hydrogen and gallium, resultantly the amount of gallium supplying is changing along with the $NH_3$ flow. Reflection high energy electron diffraction (RHEED) observation was used to confirm the N-rich condition. The crystal quality of GaN was estimated by photoluminescence (PL) and X-ray diffraction (XRD).

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