• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.446-450
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• 2013

Growth mechanism of GS-MBE(Gas source-Molecular Beam Epitaxy) has been investigated. We observed that the growth rate of GaN films is changing from 520 nm/h to 440 nm/h by the variation of V/III ratio under nitrogen-rich growth condition. It was explained that the amount of hydrogen on the growth front varies by the ammonia flow, and gallium hydrides are generated on the surface by a reaction of hydrogen and gallium, resultantly the amount of gallium supplying is changing along with the $NH_3$ flow. Reflection high energy electron diffraction (RHEED) observation was used to confirm the N-rich condition. The crystal quality of GaN was estimated by photoluminescence (PL) and X-ray diffraction (XRD).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.207-211
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• 1999

$Si/Si_{1-x}Ge_x$ MODFET structures, incorporating linearly-graded buffer layers have been grown by GaS Source Molecular Beam Epitaxy. The growth temperature of the graded layers has not significantly changed the distribution of misfit dislocation. However, the surface undulation and surface defects were increased with increasing growth temperature. In $Si/Si_{1-x}Ge_x$ MODFET structures, the densities of misfit dislocations near the Si-active layers were considerably reduced in comparison with the region of graded layers. The electron mobility of $Si/Si_{1-x}Ge_x$ MODFET structure has increased with lowering the growth temperature.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.27 no.3
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• pp.128-136
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• 2015

Reducing the building energy consumption has become one of the most important issues. However, the current engineering and technological involvement in energy analysis has been relatively low in the existing buildings. In the existing buildings, end-use analysis must be accompanied to calculate the exact amount in energy savings and such analysis should be conducted based on the energy billing data or measurement data by calibration process. Mostly, detailed energy simulation programs have been proposed for the analysis but, it is difficult to utilize them due to realistic problems. In this paper, we developed an end-use analysis tool that have input function for energy audit data and two case studies were conducted in the real-life office buildings located in Seoul, Korea. Mean Bias Error (MBE) and Coefficient of Variation of Root-Mean- Squreaed-Error (CV(RMSE)) are used for the criteria of comparison. Each index was calculated by using monthly utility bills of electricity and gas consumption. Results showed that MBE and CV (RMSE) represented with acceptable values of -0.1% and 5.7% respectively.