Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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CO Gas Sensing Characteristic of ZnO Nanowires Based on the a-, cand m-plane Oriented 4H-SiC Substrate at 300℃

a-, c-, m-면방향의 4H-SiC 기판에 형성된 ZnO 나노선 가스센서의 300℃에서 CO 가스 감지 특성

  • Jeong, Gyeong-Hwan (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Lee, Jung-Ho (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Kang, Min-Seok (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electrical Materials Engineering, Kwangwoon University)
  • 정경환 (광운대학교 전자재료공학과) ;
  • 이정호 (광운대학교 전자재료공학과) ;
  • 강민석 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2012.12.10
  • Accepted : 2013.05.24
  • Published : 2013.06.01
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Abstract

ZnO nanowires on the a-, c- and m-plane oriented 4H-SiC substrates were grown by using a high temperature tube furnace. Ti/Au electrodes were deposited on ZnO nanowires and a-, c- and m-plane 4H-SiC substrates, respectively. The shape and density of the ZnO nanowires were investigated by field emission scanning electron microscope. It was found that the growth direction of nanowires depends strongly on growth parameters such as growth temperature and pressure. In this work, The sensitivity of nanowires formed a-, c- and m-plane oriented 4H-SiC gas sensor was measured at $300^{\circ}C$ with CO gas concentration of 80%. The nanowires grown on a-plane oriented 4H-SiC show improved sensing performance than those on c- and m-plane oriented 4H-SiC due to the increased density of nanowire on a-plane 4H-SiC.

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References

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