Transactions on Electrical and Electronic Materials

  • 제13권4호
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  • Pages.208-211
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  • 2012
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Effect of ZnO Buffer Layers on the Crystallization of ITO Thin Film at Low Temperature

  • Seong, Chung-Heon (Department of Advanced Materials Engineering, Chungbuk National University) ;
  • Shin, Yong-Jun (Department of Advanced Materials Engineering, Chungbuk National University) ;
  • Jang, Gun-Eik (Department of Advanced Materials Engineering, Chungbuk National University)
  • 투고 : 2012.06.14
  • 심사 : 2012.07.16
  • 발행 : 2012.08.25
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초록

In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

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참고문헌

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피인용 문헌

  1. Effect of Electron Irradiation on the Structural Electrical and Optical Properties of ITO/ZnO Thin Films vol.27, pp.5, 2014, https://doi.org/10.12656/jksht.2014.27.5.225