Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Field-induced Resistive Switching in Ge25Se75-based ReRAM Device

Ge25Se75-based ReRAM 소자의 전계에 의한 저항 변화에 대한 연구

  • Kim, Jang-Han (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Nam, Ki-Hyun (Department of Electrical Materials Engineering, Kwangwoon University) ;
  • Chung, Hong-Bay (Department of Electrical Materials Engineering, Kwangwoon University)
  • 김장한 (광운대학교 전자재료공학과) ;
  • 남기현 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Received : 2012.02.09
  • Accepted : 2012.02.23
  • Published : 2012.03.01
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Abstract

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

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References

  1. M. T. Kostyshin, E. V. mikhailovskaya, and P. F. Romanenko, Sov. Phys. Solid State, 8, 451 (1966).
  2. J. Hajto, P. J. S. Ewen, R. E. Belford, and A. E. Owen, Thin Solid Films, 200, 229 (1991). https://doi.org/10.1016/0040-6090(91)90195-4
  3. M. N. Lozicki, S. W. Hsia, A. E. Owen, and P. J. S. Ewen, J. Noncryst. Solids, 137, 1341 (1991). https://doi.org/10.1016/S0022-3093(05)80372-2
  4. C. H. Yeo, K. N. Lee, K. Shin, J. B. Kim, and H. B. Chung, Jpn. J. Appl. Phys., 44, 5769 (2005). https://doi.org/10.1143/JJAP.44.5769
  5. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys., 69, 2849 (1991). https://doi.org/10.1063/1.348620
  6. R. Symanczyk, M. Balakrishnan, C. Gopalan, T. Happ, M. Kozicki, M. Kund, T. Mikolajick, M. Mitkova, M. Park, C. Pinnow, J. Robertson, and K. Ufert, Proceedings of the 2003 Non-Volatile Memory Technology Symposium, 17 (2003).
  7. M. N. Kozicki, C. Gopalan, M. Balakrishnan, M. Park, and M. Mitkova, Proceedings of the 2004 Non-Volatile Memory Technology Symposium, 10 (2004).
  8. M. N. Kozicki, M. Park, and M. Mitkova, IEEE T. Nanotechnol., 4, 331 (2005). https://doi.org/10.1109/TNANO.2005.846936
  9. G. Muller, T. Happ, M. Kund, G. Y. Lee, N. Nagel, and R. Sezi, IEDM Tech. Dig., 567 (2004).
  10. J. C. Bruyere and B. K. Chakraverty, Appl. Phys. Lett., 16, 40 (1970). https://doi.org/10.1063/1.1653024
  11. A. Hiroyuki and S. Hisashi, Proceeding of the IEEE, 98 (2010).