Transactions on Electrical and Electronic Materials

  • 제12권5호
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  • Pages.200-203
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  • 2011
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Evaluation of Acceptor Binding Energy of Nitrogen-Doped Zinc Oxide Thin Films Grown by Dielectric Barrier Discharge in Pulsed Laser Deposition

  • Lee, Deuk-Hee (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Chun, Yoon-Soo (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Electronic Materials Research Center, Korea Institute of Science and Technology) ;
  • Kim, Sang-Sig (Department of Electrical Engineering and Institute for Nanoscience, Korea University)
  • 투고 : 2011.05.20
  • 심사 : 2011.06.30
  • 발행 : 2011.10.25
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초록

In this research, nitrogen (N)-doped zinc oxide (ZnO) thin films have been grown on a sapphire substrate by dielectric barrier discharge (DBD) in pulsed laser deposition (PLD). DBD has been used as an effective way for massive in-situ generation of N-plasma under conventional PLD process conditions. Low-temperature photoluminescence spectra of N-doped ZnO thin films provided near-band-edge emission after a thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound excitation peak ($A^{\circ}X$) that indicated acceptor doping of ZnO with N. The acceptor binding energy of the N acceptor was estimated to be approximately 145 MeV based on the results of temperature-dependent photoluminescence (PL) measurements.

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