DOI QR코드

DOI QR Code

A Study of the Quantitative Relationship of Charge-Density Changes and the Design Area of a Fabricated Solar Cell

  • Jeon, Kyeong-Nam (Department of Electronic and Optical Communications Engineering, Gwang-ju University) ;
  • Kim, Seon-Hun (Department of Research and Business, Korea Photonics Technical Institute) ;
  • Kim, Hoy-Jin (Department of Research and Business, Korea Photonics Technical Institute) ;
  • Kim, In-Sung (Department of Research, Semitech Corporation) ;
  • Kim, Sang-Hyun (Department of Research, Semitech Corporation)
  • 투고 : 2011.03.26
  • 심사 : 2011.07.05
  • 발행 : 2011.10.25

초록

In this paper, the design area of a fabricated solar cell has been analyzed with respect to its charge density. The mathematical calculation used for charge-density derivation was obtained from the 2001 version of a MATHCAD program. The parameter range for the calculations was ${\pm}1{\times}10^{17}cm^{-3}$, which is in the normal parameter range for n-type doping impurities ($7.0{\times}10^{17}cm^{-3}$) and also for p-type impurities ($4.0{\times}10^{17}cm^{-3}$). Therefore, it can be said that the fabricated solar-cell design area has a direct effect on charge-density changes.

키워드

참고문헌

  1. Korea Chemicals Management Association, The Compilation Organization of a Chemical Term Dictionary, The Direction of Chemical Term (Il Jin Publishing, Korea, 2006).
  2. V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Based Structures (Prentice Hall, Englewood Cliffs, 1991) p. 242.
  3. W. W. Norton & Company, Crystal Fire: The Birth of the Information Age, eds. M. Riordan and L. Hoddeson (Norton, New York, 1997)
  4. J. R. Hook and H. E. Hall, Solid State Physics, 2nd ed. (Wiley, New York,1995).
  5. D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, 3rd ed. (McGraw-Hill, Boston, 2003).

피인용 문헌

  1. A Study of the Relationship Analysis of Power Conversion and Changed Capacitance in the Depletion Region of Silicon Solar Cell vol.14, pp.4, 2013, https://doi.org/10.4313/TEEM.2013.14.4.177