Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Enhancement of PTCR Characteristics of MnO2 Doped Lead Free BaTiO3-(Bi0.5Na0.5)TiO3 Ceramics with High Tc (>165℃)

MnO2가 도핑된 무연 High Tc (>165℃) BaTiO3-(Bi0.5Na0.5)TiO3 세라믹의 PTCR 특성 향상

  • Kim, Kyoung-Bum (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Jang, Young-Ho (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Chang-Il (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeong, Young-Hun (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Young-Jin (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Paik, Jong-Hoo (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Woo-Young (HIEL Corporation) ;
  • Kim, Dae-Joon (HIEL Corporation)
  • 김경범 (한국세라믹기술원 전자부품센터) ;
  • 장용호 (한국세라믹기술원 전자부품센터) ;
  • 김창일 (한국세라믹기술원 전자부품센터) ;
  • 정영훈 (한국세라믹기술원 전자부품센터) ;
  • 이영진 (한국세라믹기술원 전자부품센터) ;
  • 백종후 (한국세라믹기술원 전자부품센터) ;
  • 이우영 ((주)하이엘 기술연구소) ;
  • 김대준 ((주)하이엘 기술연구소)
  • Received : 2011.06.16
  • Accepted : 2011.08.05
  • Published : 2011.09.01
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Abstract

0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

Keywords

References

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