• Polymer(Korea)
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• v.26 no.3
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• pp.367-374
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• 2002

Electrical characteristics of crystalline polymer composites filled with nano-sized carbon black particle were studied. The developed composite system exhibited a typical positive temperature coefficient resistance (PTCR) characteristic, where the electrical resistance sharply increased at a specific temperature. The PTCR effect was sometimes followed by a negative temperature coefficient resistance (NTCR) feature with temperature, which seemingly caused by the coagulation of nano-sized carbon black particles in the excessive quantity. The PTCR temperature was controlled by the carbon black content and the external voltage. The change of electric conductivity was shown as a function of carbon black content, and the resistance was constant when the carbon black content was over 20 wt%. The room-temperature resistance was maintained by a repeated heating and cooling. The excellent PTCR characteristic was demonstrated by the low resistance in the initial stage and the instantaneous heating capability.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.

• Journal of the Korean Ceramic Society
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• v.22 no.5
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• pp.54-60
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• 1985

This study is concerned with the mechanism of PTCR in $BaTiO_3$ ceramics doped by $Nb^{+5}$ Since the vacancy compensation layer at the grain boundary of n-type doped $BaTiO_3$ ceramics has been known as a major factor for surface state to give PTCR phenomena the dependence of PTCR on such vacancy compensation layer was attemped to be confirmed experimentally in this study. For the experiment quenching and annealing at various temperature after sintering were adopted to induce difference in the thickness of vacancycompensation layer so as to exihibit difference of PTCReffect eachother. The TEX>$Ba^{++}$ cocentration at the grain and grain boundary was measured by EDAX to confirm the formation of the vacancy compensation layer. It was found that i)either decrease in the temperature for quenching ii) or increase in the temperature for annealing improves the PTCR effect clearly iii)increase in TEX>$Ba^{++}$ concentration at the grain boundary results in the improvement of PTCR effect. It was concluded that all the experimental results gave the evidence for the dependence of PTCR effect on the vacancy compensation layer at the grain boundary which had been induced possibly by the $Ba^{++}$ diffusion by the heat treatment conducted.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.579-585
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• 1987

The effects of flux KCl and dopant Nb2O5 on the PTCR characteristics of BaTiO3 prepared by molten salt synthesis method have been investigated. As the amount of dopant Nb2O5 is over the solubility limit in BaTiO3, the room-temperature resistivity increases, and the PTCR effect and the grain size decrease. The variation of the amount of flux KCl slightly influences on the room-temperature resistivity, PTCR effect and grain size in Nb2O5 doped BaTiO3, but BaTiO3 ceramics prepared by the method of molten salt synthesis show larger PTCR effect than those of conventional calcining of mixed oxides.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.111-116
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• 1987

By the method of direct wet process which has been developed in our laboratory, the high purity BaTiO3 powders could be synthesized from the room temperature to 90$^{\circ}C$ according to particle sizes. For to detect the PTCR effects, Sb2O3 wasdoped in the BaTiO3 powders which had been prepared on above method. As the results, the PTCR effects were in creased with the decreasing grain size of BaTiO3 powders.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.16-20
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• 2002

Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.115-120
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• 2004

Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05～0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.169-175
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• 2002

Semiconductive nano $(Ba_{1-x}Sb_x)TiO_3$ powders were synthesized by the hydrothermal process and Sb was simultaneously doped in the hydrothermal condition. $(Ba_{1-x}Sb_x)TiO_3$ powders obtained from optimum condition(at 20$0^{\circ}C$ for 3hr) exhibited spherical shape, high purity and nano size. The PTCR characteristics was observed when 0.1 and 0.2 mole% Sb were added and sintered at over 130$0^{\circ}C$ for 1 hour, respectively. And The ceramics exhibit the PTCR characteristics with a resistively jump $ratio($\rho$_{max}/$\rho$_{min})$ of about $10^4$. Also we found that PTCR characteristics were dependent on the microstructure.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.703-712
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• 1997

The PTCR devices of BaTiO3 doped with Sb2O3, SiO2 were prepared by Liquid Addition Method(LPAM) where doping sources were used in the forms of Liquid. The amounts of doping in LPMA is smaller than that in solid state mixing method. Also the doping process in LPMA is very suitable for BaTiO3-based PTCR devices because it is easy to obtain homogeneous mixing and reproductivity. By optimizing the doping condition in BaTiO3 system, (0.09 mol% Sb2O3, 0.25 wt% SiO2 and 0.02 wt% MnO2) it was possible to fabricate BaTiO3-based PTCR devices whee the room-temperature resistivity and specific resistivity were 15{{{{ OMEGA }}cm and 2$\times$106 respectively.

• Journal of Powder Materials
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• v.18 no.1
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• pp.41-48
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• 2011

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr)$TiO_3$ powder. Porous (Ba,Sr)$TiO_3$ ceramics were prepared by pressureless sintering at $1350^{\circ}C$ for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr)$TiO_3$ ceramics were investigated. The porosity of porous (Ba,Sr)$TiO_3$ ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from $7.51\;{\mu}m$ to $5.96\;{\mu}m$ with increasing carbon black contents. PTCR jump of the (Ba,Sr)$TiO_3$ ceramics prepared by adding carbon black was more than $10^5$, and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr)$TiO_3$ ceramics prepared by adding 40 vol% carbon black showed an excellent value of $9.68{\times}10^5$, which was above two times higher than that in (Ba,Sr)$TiO_3$ ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr)$TiO_3$ ceramics. It was considered that carbon black is an effective additive for preparing porous $BaTiO_3$ based ceramics. It is believed that newly prepared (Ba,Sr)$TiO_3$ cermics can be used for PTC thermistor.