한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권7호
  • /
  • Pages.532-536
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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ICP Source를 이용한 저온 증착 a-SiNx:H 특성 평가

Low Temperature Deposition a-SiNx:H Using ICP Source

  • 강성칠 (고려대학교 제어계측공학과) ;
  • 이동혁 (고려대학교 디스플레이반도체물리학과) ;
  • 소현욱 (고려대학교 디스플레이반도체물리학과) ;
  • 장진녕 (고려대학교 디스플레이반도체물리학과) ;
  • 홍문표 (고려대학교 디스플레이반도체물리학과) ;
  • 권광호 (고려대학교 제어계측공학과)
  • Kang, Sung-Chil (Department of Control and Instrumentation Engineering, Korea University) ;
  • Lee, Dong-Hyeok (Department of Display and Semiconductor Physics Engineering, Korea University) ;
  • So, Hyun-Wook (Department of Display and Semiconductor Physics Engineering, Korea University) ;
  • Jang, Jin-Nyoung (Department of Display and Semiconductor Physics Engineering, Korea University) ;
  • Hong, Mun-Pyo (Department of Display and Semiconductor Physics Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
  • 투고 : 2011.03.02
  • 심사 : 2011.06.20
  • 발행 : 2011.07.01
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초록

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.

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