한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권7호
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  • Pages.537-542
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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펄스레이저증착법으로 증착한 Indium Zinc Oxide 박막의 물성

Properties of Indium Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition

  • 최학순 (울산대학교 물리학과 및 에너지 하베스트-스토리지 연구센터) ;
  • 정일교 (울산대학교 물리학과 및 에너지 하베스트-스토리지 연구센터) ;
  • 신문수 (울산대학교 물리학과 및 에너지 하베스트-스토리지 연구센터) ;
  • 김헌오 (울산대학교 물리학과 및 에너지 하베스트-스토리지 연구센터) ;
  • 김용수 (울산대학교 물리학과 및 에너지 하베스트-스토리지 연구센터)
  • Choi, Hak-Soon (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Jeong, Il-Kyo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Shin, Mun-Soo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Kim, Heon-Oh (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan) ;
  • Kim, Yong-Soo (Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan)
  • 투고 : 2011.04.25
  • 심사 : 2011.06.27
  • 발행 : 2011.07.01
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초록

Recently, n-InZnO/p-CuO oxide diode has attracted great attention due to possible application for selector device of 3-dimensional cross-point resistive memory structures. To investigate the detailed properties of InZnO (IZO), we have deposited IZO films on the fused quartz substrate using PLD (pulsed laser deposition) method at oxygen pressure of 1~100 mTorr and substrate temperature of RT$\sim600^{\circ}C$. The influence of oxygen pressure and substrate temperature on structural, optical and electrical of IZO films is analyzed using XRD (x-ray diffraction), SEM (scanning electron microscopy), UV-Vis spectrophotometry, spectroscopic ellipsometry (SE) and hall measurements. The XRD results shows that the deposited thin films are polycrystalline over $300^{\circ}C$ of substrate temperature independent of oxygen pressure. The resistivity of films was increased as oxygen pressure and substrate temperature decrease. The thickness and optical constants of the deposited films measured with UV-Vis spectrophotometer were also compared with those of broken SEM and SE results.

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