JSTS:Journal of Semiconductor Technology and Science

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Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

  • Jang, Jung-Shik (Department of Electronic Engineering, Sogang University) ;
  • Choi, Woo-Young (Department of Electronic Engineering, Sogang University)
  • Received : 2011.07.17
  • Published : 2011.12.31
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Abstract

The ambipolar behavior of tunneling field-effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (${\nu}$). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the effect of ambipolar behavior on the device performance should be parameterized quantitatively, and this has been successfully evaluated as a function of device structure, gate oxide thickness, supply voltage, drain doping concentration and body doping concentration by using ${\nu}$.

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References

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